Determination of Nitrogen Doping Concentration in Doped 4H-SiC Epilayers by Low Temperature Photoluminescence

2005 ◽  
Vol 72 (2-3) ◽  
pp. 254-257 ◽  
Author(s):  
A Henry ◽  
U Forsberg ◽  
M K Linnarsson ◽  
E Janzén
Keyword(s):  
Low Temperature ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
Low Temperature Photoluminescence

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

2005 ◽  
Vol 483-485 ◽  
pp. 9-12 ◽  
Author(s):  
Thomas Anderson ◽  
Donovan L. Barrett ◽  
J. Chen ◽  
Ejiro Emorhokpor ◽  
A. Gupta ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Nitrogen Doping ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Insulating Properties ◽  
Low Temperature Photoluminescence

Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC

1994 ◽  
Vol 65 (19) ◽  
pp. 2457-2459 ◽  
Author(s):  
A. Henry ◽  
O. Kordina ◽  
C. Hallin ◽  
C. Hemmingsson ◽  
E. Janzén
Keyword(s):  
Nitrogen Doping ◽  
Doping Concentration

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

2012 ◽  
Vol 711 ◽  
pp. 164-168 ◽  
Author(s):  
Hervé Peyre ◽  
J.W. Sun ◽  
Jude Guelfucci ◽  
Sandrine Juillaguet ◽  
Jawad ul Hassan ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Low Temperature ◽  
Doping Level ◽  
Doping Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Aluminum Concentration ◽  
Power Device ◽  
Device Applications ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

Focusing on the change in aluminium-related photoluminescence lines in 4H-SiC versus doping concentration, we have used a combination of LTPL (Low Temperature PhotoLuminescence) and secondary ion mass spectrometry measurements to set new calibration curves. In this way, one can probe the change in aluminum concentration in the range 1017to 1019cm-3. When applied to LTPL maps collected on full 3-inch wafers, we show that such abacuses constitute a powerful tool to control efficiently the doping level of as-grown p+(emitters) and p++(contact) layers for power device applications.

LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF GaxIn1-xAs/ InP

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-383-C5-392 ◽  
Author(s):  
K. H. Goetz ◽  
A. V. Solomonov ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
M. Razeghi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Photoluminescence
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