LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF GaxIn1-xAs/ InP

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-383-C5-392 ◽  
Author(s):  
K. H. Goetz ◽  
A. V. Solomonov ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
M. Razeghi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Photoluminescence

Low temperature photoluminescence from disordered granular ZnO

2016 ◽  
Vol 169 ◽  
pp. 326-333 ◽  
Author(s):  
S. Pal ◽  
A. Sarkar ◽  
P. Kumar ◽  
D. Kanjilal ◽  
T. Rakshit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Photoluminescence

Low temperature photoluminescence study in AlxGa1−xAs alloys in the indirect band gap region (x≳0.4)

1995 ◽  
Vol 78 (8) ◽  
pp. 5090-5097 ◽  
Author(s):  
G. Torres‐Delgado ◽  
R. Castanedo‐Perez ◽  
P. Diaz‐Arencibia ◽  
J. G. Mendoza‐Alvarez ◽  
J. L. Orozco‐Vilchis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Photoluminescence Study ◽  
Indirect Band Gap ◽  
Low Temperature Photoluminescence

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

2014 ◽  
Vol 778-780 ◽  
pp. 243-246
Author(s):  
P. Kwasnicki ◽  
V. Jokubavicius ◽  
J.W. Sun ◽  
H. Peyre ◽  
R. Yakimova ◽  
...  
Keyword(s):  
Low Temperature ◽  
Growth Process ◽  
Epitaxial Layers ◽  
Optical Investigation ◽  
Defect Sites ◽  
Vacuum Atmosphere ◽  
Gas Atmosphere ◽  
Low Temperature Photoluminescence

We investigated three 3C-SiC samples grown on 6H SiC substrate by sublimation epitaxy under gas atmosphere. We focus on the low temperature photoluminescence and Raman measurements to show that compare to a growth process under vacuum atmosphere, the gas atmosphere favor the incorporation of impurities at already existing and/or newly created defect sites.

Sign in / Sign up

Export Citation Format

Share Document