Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

2005 ◽  
Vol 483-485 ◽  
pp. 9-12 ◽  
Author(s):  
Thomas Anderson ◽  
Donovan L. Barrett ◽  
J. Chen ◽  
Ejiro Emorhokpor ◽  
A. Gupta ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Nitrogen Doping ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Insulating Properties ◽  
Low Temperature Photoluminescence

Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

2004 ◽  
Vol 815 ◽  
Author(s):  
M. Yoganathan ◽  
A. Gupta ◽  
E. Semenas ◽  
E. Emorhokpor ◽  
C. Martin ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Room Temperature ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Intrinsic Defect ◽  
Defect Level ◽  
Low Temperature Photoluminescence

AbstractSemi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.

Optical, Electrical and Surface Characterization of Mercuric Iodide Platelets Grown in the HgI 2-HI-H2O System

1997 ◽  
Vol 487 ◽  
Author(s):  
L. Fornaro ◽  
H. Chen ◽  
K. Chattopadhyay ◽  
K.-T Chen ◽  
A. Burger
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Apparent Resistivity ◽  
Surface Characterization ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Mercuric Iodide ◽  
Photoluminescence Properties ◽  
Low Temperature Photoluminescence

AbstractThe optical, electrical and surface properties of mercuric iodide platelets grown from solution in a HgI2-HI-H2O system were investigated by comparing them with Physical Vapor Transport (PVT) grown crystals. The absence of bulk imperfections and the uniformity of the as-grown surfaces and the KI solution etched surfaces were confirmed by optical microscopy. The as-grown surface uniformity is higher for solution grown crystals than that of PVT crystals, since the platelets do not have to be cleaved or polished. AFM studies show that the roughness for the cleaved, aged and etched surfaces were 0.06 nm, 0.48 nm and 0.3 nm respectively. Low temperature photoluminescence properties were measured for the two kind of crystals and will be discussed. However, I-V curves give higher current density and lower apparent resistivity values for the solution grown than for PVT grown crystals. Correlations between optical and surface quality as well as the electrical properties of the crystals grown from both solution and PVT methods are also discussed.

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

2011 ◽  
Vol 679-680 ◽  
pp. 169-172
Author(s):  
Georgios Zoulis ◽  
Jian Wu Sun ◽  
Irina G. Galben-Sandulache ◽  
Guoli L. Sun ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Small Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Optical Investigation ◽  
Continuous Feed ◽  
Transport Technique

We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC samples grown with the Continuous-Feed Physical Vapor Transport technique, using a small diameter neck to filter the defects and improve the as-grown material.

Electrical resistivity and photoluminescence of lead iodide crystals

2007 ◽  
Vol 61 (1) ◽  
Author(s):  
M. Matuchová ◽  
K. Žďánský ◽  
M. Svatuška ◽  
J. Zavadil ◽  
O. Procházková
Keyword(s):  
Electrical Resistivity ◽  
Optical Properties ◽  
Room Temperature ◽  
Direct Synthesis ◽  
Zone Melting ◽  
Lead Iodide ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Low Temperature Photoluminescence

AbstractDirect synthesis of lead iodide, a promising material for X-ray and γ detectors operating at room temperature, was developed and optimized. The influence of admixture of rare earth elements Ce, Ho, Gd, Yb, Er, and Tb in concentrations 0.05–0.5 at. % on the quality of prepared PbI2 was investigated. Zone melting was employed in order to increase the lead iodide purity. Electrical and optical properties of PbI2 samples were assessed on the basis of the measurement of electrical resistivity and low-temperature photoluminescence. The electrical resistivity of synthesized samples varied from 109 Ω cm to 1011 Ω cm and occasionally it was increased up to 1013 Ω cm.

Optical Properties of Doped Cd1−xMnxTe

1986 ◽  
Vol 89 ◽  
Author(s):  
Y. Lansari ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
P. Becia ◽  
D. Kaiser
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Spectral Range ◽  
Room Temperature ◽  
Far Infrared ◽  
Optical Quality ◽  
Structural Quality ◽  
Reflectance Measurements ◽  
Low Temperature Photoluminescence

AbstractThe introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.

SiC Single Crystal Growth on Dual Seed with Different Surface Properties

2013 ◽  
Vol 740-742 ◽  
pp. 11-14
Author(s):  
Sang Il Lee ◽  
Jung Young Jung ◽  
Mi Seon Park ◽  
Hee Tae Lee ◽  
Doe Hyung Lee ◽  
...  
Keyword(s):  
Surface Properties ◽  
Growth Period ◽  
Single Crystal Growth ◽  
Seed Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Mean Square ◽  
Transport Technique ◽  
Better Than

SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique. And then SiC crystal wafers sliced from the SiC ingots were systematically investigated in order to find out the dependence of surface properties for seed on the polytype formation. While n-type SiC crystals exhibiting the 4H polytype were grown on seed crystal having high root-mean-square (rms) value, 6H-SiC crystals were grown on seed having lower rms value. However, 6H polytype was maintained on on-axis and off-axis seeds during the entire growth period. The crystal quality of 6H-SiC single crystals grown on on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on off-axis seed.

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

2005 ◽  
pp. 9-12
Author(s):  
Thomas Anderson ◽  
Donovan L. Barrett ◽  
J. Chen ◽  
Ejiro Emorhokpor ◽  
A. Gupta ◽  
...  
Keyword(s):  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport

Bulk Growth of Large Area SiC Crystals

2016 ◽  
Vol 858 ◽  
pp. 5-10 ◽  
Author(s):  
Adrian R. Powell ◽  
Joseph J. Sumakeris ◽  
Yuri Khlebnikov ◽  
Michael J. Paisley ◽  
R.T. Leonard ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Dislocation Density ◽  
Epitaxial Growth ◽  
Substrate Surface ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Large Area ◽  
Substrate Quality ◽  
Bulk Growth

The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

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