scholarly journals Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors

2017 ◽  
Vol 132 (4) ◽  
pp. 1230-1233
Author(s):  
R. Remmouche ◽  
R. Fates ◽  
H. Bouridah
2008 ◽  
Vol 18 (04) ◽  
pp. 1055-1068
Author(s):  
MOHAMMAD R. ESMAEILI-RAD ◽  
HYUN JUNG LEE ◽  
ANDREI SAZONOV ◽  
AROKIA NATHAN

Nanocrystalline silicon ( nc - Si ) thin film transistors (TFTs) have potential for high-performance applications in large area electronics, such as next generation of flat panel displays and medical x-ray imagers, for pixel drivers, readout circuits, as well as complementary channel logic circuits for system-on-panel integration. This potential stems from reduced threshold voltage shift and higher transconductance, compared to amorphous silicon counterpart. In this paper, we discuss various TFT structures, their associated design and performance considerations, including leakage current and threshold voltage stability mechanisms.


2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  

2006 ◽  
Vol 100 (11) ◽  
pp. 114905 ◽  
Author(s):  
M. Cattani ◽  
M. C. Salvadori ◽  
A. R. Vaz ◽  
F. S. Teixeira ◽  
I. G. Brown

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