NANOCRYSTALLINE SILICON THIN FILM TRANSISTORS FOR HIGH PERFORMANCE LARGE AREA ELECTRONICS

2008 ◽  
Vol 18 (04) ◽  
pp. 1055-1068
Author(s):  
MOHAMMAD R. ESMAEILI-RAD ◽  
HYUN JUNG LEE ◽  
ANDREI SAZONOV ◽  
AROKIA NATHAN
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
High Performance ◽  
Nanocrystalline Silicon ◽  
Large Area ◽  
Silicon Thin Film ◽  
Threshold Voltage Shift ◽  
Readout Circuits ◽  
Large Area Electronics

Nanocrystalline silicon ( nc - Si ) thin film transistors (TFTs) have potential for high-performance applications in large area electronics, such as next generation of flat panel displays and medical x-ray imagers, for pixel drivers, readout circuits, as well as complementary channel logic circuits for system-on-panel integration. This potential stems from reduced threshold voltage shift and higher transconductance, compared to amorphous silicon counterpart. In this paper, we discuss various TFT structures, their associated design and performance considerations, including leakage current and threshold voltage stability mechanisms.

Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3719-3723 ◽  
Author(s):  
Ryoji Oritsuki ◽  
Toshikazu Horii ◽  
Akira Sasano ◽  
Ken Tsutsui ◽  
Toshiko Koizumi ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Pulse Operation ◽  
Threshold Voltage Shift ◽  
Voltage Shift

DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

2011 ◽  
Vol 1321 ◽  
Author(s):  
I-Chung Chiu ◽  
I-Chun Cheng ◽  
Jian Z. Chen ◽  
Jung-Jie Huang ◽  
Yung-Pei Chen
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Mechanical Tensile ◽  
Gate Bias Stress

ABSTRACTStaggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

Proximity Recovery Layers to Speed up the Recovery of Stressed Amorphous Silicon Thin-Film Transistors

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Hack ◽  
W. B. Jackson ◽  
R. Lujan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
High Voltage ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Threshold Voltage Shift ◽  
Speed Up ◽  
Hydrogenated Amorphous

ABSTRACTWe have developed a means to speed up the recovery of both the threshold voltage shift of hydrogenated amorphous silicon (a-Si:H) transistors and the Vx shift of high voltage a-Si devices. This is accomplished by placing a lightly doped compensated layer adjacent to the active layer in these transistors. This proximity recovery layer does not alter the initial characteristics of a-Si:H transistors and is completely process compatible with standard fabrication procedures.

A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors

2007 ◽  
Vol 46 (7A) ◽  
pp. 4042-4045 ◽  
Author(s):  
Chang-Wook Han ◽  
Min-Koo Han ◽  
Nack-Bong Choi ◽  
Chang-Dong Kim ◽  
Ki-Yong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Substrate Bias ◽  
Silicon Thin Film ◽  
Bias Effect ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Stability of Amorphous Silicon Thin Film Transistors for Analog Circuit Applications

1997 ◽  
Vol 467 ◽  
Author(s):  
R. I. Hornsey ◽  
T. Mahnke ◽  
P. Madeira ◽  
K. Aflatooni ◽  
A. Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Analog Circuits ◽  
Thin Film Transistors ◽  
Reverse Bias ◽  
Analog Circuit ◽  
Large Area ◽  
Silicon Thin Film ◽  
Threshold Voltages

ABSTRACTAnalog circuits using amorphous silicon thin film transistors offer significant advantages for in situ signal processing in large-area optical and x-ray imagers. However such circuits are susceptible to gate-bias-induced shifts in the threshold voltages of the constituent transistors. In this work, the change of threshold voltage for devices undergoing cycles of stress, relaxation and reverse bias is measured in order to determine the feasibility of resetting the threshold voltage electrically. It is concluded that, although the reverse bias does assist the recovery of the threshold voltage, the process is still not sufficiently rapid. An analog amplifier circuit is then described which uses negative feedback to achieve a gain that is stable to within 6% over a period of 8 hours.

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