scholarly journals Exciton Binding Energy in Extremely Shallow Quantum Wells

1995 ◽  
Vol 87 (2) ◽  
pp. 528-532 ◽  
Author(s):  
J. Kossut ◽  
J.K. Furdyna
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy

Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

2002 ◽  
Vol 91 (4) ◽  
pp. 2553-2555 ◽  
Author(s):  
Jun Shao ◽  
Achim Dörnen ◽  
Rolf Winterhoff ◽  
Ferdinand Scholz
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Exciton Binding Energy

Magneto-optical determination of the exciton binding energy in GaAs quantum wells

1986 ◽  
Vol 174 (1-3) ◽  
pp. A433
Author(s):  
W. Ossau ◽  
B. Jäkel ◽  
E. Bangert ◽  
G. Landwehr ◽  
G. Weimann
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy ◽  
Optical Determination

EXCITON CONFINEMENT IN SEMICONDUCTOR MULTIPLE QUANTUM WELLS

1990 ◽  
Vol 04 (15n16) ◽  
pp. 2345-2356
Author(s):  
Y. FU ◽  
K. A. CHAO
Keyword(s):  
Wave Function ◽  
Perturbation Theory ◽  
Binding Energy ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Three Dimensional ◽  
Exciton Binding Energy ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Barrier Width

Exciton binding energy in semiconductor multiple quantum well (MQW) systems is analyzed with both the variational method and the perturbation theory. The intrinsic deficiency of the use of the two-dimensional exciton envelop wave function is clearly demonstrated. Using a GaAs/Al x Ga 1−xAs MQW as an example to calculate the exciton binding energy with a variational three-dimensional trial envelop function, we found that in many realistic samples the spatial extension of an exciton covers a region of several lattice constant dA + dB, where dA is the barrier width and dB is the well width.

scholarly journals Image charges in semiconductor quantum wells: Effect on exciton binding energy

1990 ◽  
Vol 42 (9) ◽  
pp. 5906-5909 ◽  
Author(s):  
D. B. Tran Thoai ◽  
R. Zimmermann ◽  
M. Grundmann ◽  
D. Bimberg
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy ◽  
Semiconductor Quantum Wells

Exciton-binding-energy maximum inGa1−xInxAs/GaAs quantum wells

1991 ◽  
Vol 43 (14) ◽  
pp. 11944-11949 ◽  
Author(s):  
M. J. L. S. Haines ◽  
N. Ahmed ◽  
S. J. A. Adams ◽  
K. Mitchell ◽  
I. R. Agool ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy ◽  
Energy Maximum
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