scholarly journals Electron Paramagnetic Resonance Study of Se-Doped AlSb: Evidence for Negative-U of the DX Center

1995 ◽  
Vol 88 (5) ◽  
pp. 1043-1047
Author(s):  
P. Stallinga ◽  
W. Walukiewicz ◽  
E.R. Weber ◽  
P. Becla ◽  
J. Lagowski
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Dx Center ◽  
Electron Paramagnetic

EPR Studies of DX Center Related Paramagnetic States in Ga0.69 Al0.31 As:Sn

1989 ◽  
Vol 148 ◽  
Author(s):  
H.J. Von Bardeleben ◽  
J.C. Bourgoin ◽  
P. Basmaji ◽  
P. Gibart
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Effective Mass ◽  
Conduction Band ◽  
Electron Paramagnetic Resonance Study ◽  
Excited Configuration ◽  
Paramagnetic Resonance ◽  
Dx Center ◽  
Electron Paramagnetic ◽  
Photoexcitation Spectrum

ABSTRACTThe electron paramagnetic resonance study of the DX center in Sn doped direct gap Ga0.69Al0.31 As shows the existence of a shallow effective mass like excited configuration of this defect. The photoexcitation spectrum for this transformation has a threshold at 0.8 eV; the photoionization of the DX center is not a transition to the lowest r conduction band as previously assumed. After photoexcitation additional paramagnetic defects are observed.

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