Lattice Deformation in AlxGa1-xAs Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
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1977 ◽
Vol 35
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pp. 440-441
1992 ◽
Vol 50
(1)
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pp. 668-669
1998 ◽
Vol 184-185
(1-2)
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pp. 1209-1213
2004 ◽
Vol 171
(4S)
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pp. 424-424
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1988 ◽
Vol 49
(C4)
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pp. C4-693-C4-696
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