Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular‐beam epitaxy

1979 ◽  
Vol 50 (6) ◽  
pp. 4457-4458 ◽  
Author(s):  
Yuichi Kawamura ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Lattice Deformation ◽  
Inp Substrates

Characterization of InGaAs/Inp Epitaxial Layers Grown Over V-Groove Patterned Inp Substrates Using Gas Source Molecular Beam Epitaxy

1993 ◽  
Vol 326 ◽  
Author(s):  
N.J. Bulitka ◽  
A. Gupta ◽  
B.J. Robinson ◽  
D.A. Thompson ◽  
G.C. Weatherly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Gas Source ◽  
Inp Substrates

scholarly journals InP and InGaAs grown on InP substrate by molecular beam epitaxy

2022 ◽  
Vol 355 ◽  
pp. 03047
Author(s):  
Hailong Yu ◽  
Hanchao Gao ◽  
Wei Wang ◽  
Ben Ma ◽  
Zhijun Yin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Strongly Correlated ◽  
Inp Substrate ◽  
Inp Substrates

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy

2006 ◽  
Vol 293 (2) ◽  
pp. 291-293
Author(s):  
L.J. Cui ◽  
Y.P. Zeng ◽  
B.Q. Wang ◽  
Z.P. Zhu
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

Nitrogen-Passivation Effects of Si Substrates on Properties of ZnO Epitaxial Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

2010 ◽  
Vol 56 (3) ◽  
pp. 827-831 ◽  
Author(s):  
Jae-Young Leem ◽  
Min Su Kim ◽  
Ghun Sik Kim ◽  
Min Young Cho ◽  
Do Yeob Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Si Substrates

Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

1989 ◽  
Vol 160 ◽  
Author(s):  
Tetsuroh Minemura ◽  
Junko Asano ◽  
Kazuo Tsutsui ◽  
Seijiro Furukawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Considerable Influence ◽  
Heteroepitaxial Growth ◽  
Remarkable Effect

AbstractHeteroepitaxial growth of CaxSr1-xF2 layers on Si (100) substrates by molecular beam epitaxy has been investigated for GaAs / fluoride / Si structures. The Si (100) substrates off-oriented toward [011] show no considerable influence on crystallinity of CaF2 and SrF2 epitaxial layers. The off - oriented substrates, however, influence a remarkable effect on CaxSr1-xF2 layers, resulting in poor crystallinity rather than good one. This influence of off-oriented Si (100) substrates on the heteroepitaxy of CaxSr1-xF2 layers was the opposite of that found in GaAs/Si (100) structures.

Growth by molecular‐beam epitaxy and characterization of (InAs)m(GaAs)mshort period superlattices on InP substrates

1990 ◽  
Vol 68 (3) ◽  
pp. 1282-1286 ◽  
Author(s):  
Hideo Toyoshima ◽  
Takayoshi Anan ◽  
Kenichi Nishi ◽  
Toshinari Ichihashi ◽  
Akihiko Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates

Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

2004 ◽  
Vol 85 (18) ◽  
pp. 4043-4045 ◽  
Author(s):  
T. Kitada ◽  
T. Aoki ◽  
I. Watanabe ◽  
S. Shimomura ◽  
S. Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron ◽  
High Electron Mobility ◽  
Inp Substrates
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