InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF4 261  nm laser

2014 ◽  
Vol 53 (10) ◽  
pp. 2030 ◽  
Author(s):  
Junichiro Kojou ◽  
Ryo Abe ◽  
Ryosuke Kariyama ◽  
Hiroki Tanaka ◽  
Akira Sakurai ◽  
...  
2005 ◽  
Vol 13 (7) ◽  
pp. 2345 ◽  
Author(s):  
Mathieu Jacquemet ◽  
Fr�d�ric Druon ◽  
Fran�ois Balembois ◽  
Patrick Georges ◽  
Bernard Ferrand

2015 ◽  
Vol 118 (6) ◽  
pp. 998-1001
Author(s):  
C. M. Zhang ◽  
W. X. Yu ◽  
C. G. Zhang ◽  
Y. Yao ◽  
P. F. Zhu ◽  
...  

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