Ultrashort Free-Carrier Lifetime for Low Nonlinear Loss in Silicon Waveguides

2009 ◽  
Author(s):  
Amy C. Turner-Foster ◽  
Mark A. Foster ◽  
Jacob S. Levy ◽  
Carl B. Poitras ◽  
Reza Salem ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
Silicon Waveguides ◽  
Nonlinear Loss

Reducing the free-carrier lifetime in silicon waveguides by controlled Au doping

2008 ◽  
Author(s):  
Andrzej Gajda ◽  
Jost Muller ◽  
Olaf Nobis ◽  
Jurgen Bruns ◽  
Ivano Giuntoni ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
Silicon Waveguides

Contactless Spatially Resolved Measurement of Bulk Free-Carrier Lifetime in Silicon Ingots

1986 ◽  
Vol 69 ◽  
Author(s):  
S. M. Johnson ◽  
L. G. Johnson ◽  
R. Hemphill
Keyword(s):  
Spatial Dependence ◽  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Transient Absorption ◽  
Free Carrier ◽  
Large Area ◽  
Spatially Resolved ◽  
Probe Transmission ◽  
Transmission Measurements ◽  
Absorption Measurements

AbstractA contactless spatially resolved measurement of bulk free-carrier lifetime in polycrystalline silicon ingots was accomplished using optically modulated free-carrier infrared absorption. Using a CW Nd:YAG laser (λ = 1.319 μm) for a probe and novel pulsed, tunable, infrared dye laser (λ = 1.10 to 1.13 μm) with photon energies near the Si bandgap, for a pump, the free-carrier lifetime was determined from transient absorption measurements to a maximum depth of 3.0 cm from the surface of an ingot. The spatial dependence of the free-carrier lifetime and the distribution of precipitates (determined from infrared probe transmission measurements) measured along the growth axis of an ingot were found to be strongly related to the spatial dependence of the I–V characteristics of large area solar cells fabricated from the subsequently wafered ingot.

Ultrafast nonlinear optical processes and free-carrier lifetime in silicon nanowaveguides

2011 ◽  
Author(s):  
Ali R. Motamedi ◽  
Amir H. Nejadmalayeri ◽  
Anatol Khilo ◽  
Franz X. Kärtner ◽  
Erich P. Ippen
Keyword(s):  
Nonlinear Optical ◽  
Carrier Lifetime ◽  
Free Carrier

Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime

2010 ◽  
Author(s):  
Nicholas M. Wright ◽  
Andrew J. Smith ◽  
Konstantin Litvinenko ◽  
Russell Gwilliam ◽  
Goran Mashanovich ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
Rib Waveguides

Nonlinear loss characterization of continuous wave guiding in silicon wire waveguides

2021 ◽  
Author(s):  
Masatoshi TOKUSHIMA ◽  
Jun Ushida ◽  
Takahiro Nakamura
Keyword(s):  
Continuous Wave ◽  
Short Pulse ◽  
Propagation Loss ◽  
Photon Absorption ◽  
Light Sources ◽  
Free Carrier Absorption ◽  
Silicon Waveguides ◽  
Nonlinear Loss ◽  
Parameter Values

Abstract Accurate propagation loss characterization of silicon waveguides is increasingly demanded for silicon-photonics-(Si-Ph) applications with high-power continuous-wave-(CW) light sources. We report on nonlinear loss parameters of silicon wire waveguides for 1.31-μm-wavelength CW light extracted from transmission data measured for different lengths and polarizations. Such parameters were, so far, unavailable, although they are required for accurately modeling Si-Ph optical circuits. More-than-ten-times enhancement of two-photon absorption from prior results for short pulse light was observed at power densities ranging up to 4.7×1011 W/m2 while free carrier absorption was suppressed. We estimate the nonlinear loss of the waveguide using the parameter values obtained

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