Growth Evolution and Time-Resolved Photoluminescence Studies of III-Nitride Light-Emitting Diodes Grown by Abbreviated Growth Mode on Patterned AGOG Substrate

Author(s):  
Yik-Khoon Ee ◽  
Xiao-Hang Li ◽  
J. M. Biser ◽  
W. Cao ◽  
Helen M. Chan ◽  
...  
Optik ◽  
2016 ◽  
Vol 127 (4) ◽  
pp. 1809-1813 ◽  
Author(s):  
Qiang Li ◽  
Shuai Wang ◽  
Zhi-Na Gong ◽  
Feng Yun ◽  
Ye Zhang ◽  
...  

1999 ◽  
Author(s):  
Milan Pophristic ◽  
Frederick H. Long ◽  
Chuong A. Tran ◽  
Ian T. Ferguson ◽  
Robert F. Karlicek, Jr.

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FJ01 ◽  
Author(s):  
Felix Nippert ◽  
Sergey Karpov ◽  
Ines Pietzonka ◽  
Bastian Galler ◽  
Alexander Wilm ◽  
...  

1999 ◽  
Vol 86 (2) ◽  
pp. 1114-1118 ◽  
Author(s):  
M. Pophristic ◽  
F. H. Long ◽  
C. Tran ◽  
I. T. Ferguson ◽  
R. F. Karlicek

2009 ◽  
Vol 95 (10) ◽  
pp. 101904 ◽  
Author(s):  
Grigory A. Onushkin ◽  
Sang-Su Hong ◽  
Jin-Hyun Lee ◽  
June-Sik Park ◽  
Joong-Kon Son ◽  
...  

2016 ◽  
Vol 12 (7) ◽  
pp. 736-741 ◽  
Author(s):  
Houqiang Fu ◽  
Zhijian Lu ◽  
Xin-Hao Zhao ◽  
Yong-Hang Zhang ◽  
Steven P. DenBaars ◽  
...  

1998 ◽  
Vol 73 (24) ◽  
pp. 3550-3552 ◽  
Author(s):  
M. Pophristic ◽  
F. H. Long ◽  
C. Tran ◽  
I. T. Ferguson ◽  
R. F. Karlicek

2008 ◽  
Vol 18 (01) ◽  
pp. 179-185 ◽  
Author(s):  
MEREDITH L. REED ◽  
GREGORY A. GARRETT ◽  
ANAND V. SAMPATH ◽  
PAUL H. SHEN ◽  
CHARLES J. COLLINS ◽  
...  

We present material and device characterization of 280 nm semiconductor ultraviolet light emitting diodes. These devices exhibit low series resistance, wavelength stability with increasing current, and have a half-life in excess of 570hrs, depending upon the injection current. Time-resolved photoluminescence studies of these materials prior to fabrication have been correlated with the device performance. We also discuss the potential for use in water purification.


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