100GHz Balanced Photodetector Module

2018 ◽  
Author(s):  
P. Runge ◽  
G. Zhou ◽  
F. Ganzer ◽  
S. Keyvaninia ◽  
S. Mutschall ◽  
...  
Keyword(s):  
Balanced Photodetector

High-power flip-chip balanced photodetector with >40 GHz bandwidth

2013 ◽  
Author(s):  
A. Beling ◽  
A. S. Cross ◽  
Q. Zhou ◽  
Y. Fu ◽  
J. C. Campbell
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Balanced Photodetector

Monolithically integrated balanced photodetector and its application in OTDM 160 Gbit∕s DPSK transmission

2003 ◽  
Vol 39 (16) ◽  
pp. 1204 ◽  
Author(s):  
A. Beling ◽  
H.-G. Bach ◽  
D. Schmidt ◽  
G.G. Mekonnen ◽  
R. Ludwig ◽  
...  
Keyword(s):  
Monolithically Integrated ◽  
Balanced Photodetector

The balanced photodetector buried with semi-insulating InP

2005 ◽  
Author(s):  
M. Nakaji ◽  
E. Ishimura ◽  
Y. Hanamaki ◽  
K. Shimomura ◽  
T. Aoyagi ◽  
...  
Keyword(s):  
Balanced Photodetector

Novel Growth Techniques for the Fabrication of Photonic Integrated Circuits

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Coudenys ◽  
G. Vermeire ◽  
Y. Zhu ◽  
I. Moerman ◽  
L. Buydens ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Integration Schemes ◽  
Recent Developments ◽  
Laser Waveguide ◽  
Special Growth ◽  
And Performance ◽  
Balanced Photodetector

INTRODUCTION:The fabrication of Photonic Integrated Circuits (PIC) requires the development of advanced growth and processing techniques. One of the major problems in the fabrication of PICs is the monolithic integration of passive and active waveguiding structures with a different bandgap. This is schematically shown in figure 1 where a laser, waveguide and detector are integrated on the same substrate. The following relationship between the different bandgaps is required : Eg (detector) < Eg (laser) < Eg (waveguide). One of the most advanced PICs is certainly a coherent receiver chip where a local DFB laser oscillator is integrated with a Y-junction, 3-dB splitter and balanced photodetector pair [1,2,3]. Current integration schemes are mostly based on the use of different epitaxial growth steps to obtain the different bandgap materials on the same substrate. In order to improve yield and performance it is required to reduce the number of growth steps by using special growth techniques. In this paper we will briefly describe some of the recent developments in advanced growth techniques. A more detailed description will be given of our recent work based on selective growth and shadow masked growth using Metal Organic Vapour Phase Epitaxy (MOVPE).

scholarly journals Generation of monocycle efficient terahertz pulses by optical rectification in LiNBO3 at 800 nm

2018 ◽  
Vol 1 (1) ◽  
pp. 14
Author(s):  
Ali Khumaeni ◽  
Hideaki Kitahara, ◽  
Takashi Furuya ◽  
Kohji Yamamoto ◽  
Masahiko Tani
Keyword(s):  
Conversion Efficiency ◽  
Pump Pulse ◽  
Optical Rectification ◽  
Pulse Front ◽  
Optical Source ◽  
Znte Crystal ◽  
Terahertz Pulses ◽  
Electro Optic ◽  
Balanced Photodetector ◽  
Thz Power

Generation of efficient terahertz (THz) pulses was experimentally made by tilted pump pulse front scheme with a Mg-doped LiNbO3 crystal. In this study, a spitfire laser (Ti:sapphire laser, 800 nm, 3 mJ, 1 kHz) was used as an optical source for the generation and detection of THz pulses. The electro-optic (EO) detection optics consisting of a ZnTe crystal (1 mm in thickness) and a balanced photodetector was used. To obtain optimum THz characteristics and pump to THz power conversion efficiency, the image of the grating was made coincides with the tilted pump pulse front. The maximum THz electric field of 8.5 kV/cm and the frequency bandwidth of 2.5 THz were achieved by using pump pulse energy of 2.4 mJ and pump pulse width of 100 fs. The THz energy of 4.15 μJ was obtained and pump-to-THz conversion efficiency was estimated to be approximately 1.73 x 10-3.

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