Laboratory characterization of soft X-ray optics

Author(s):  
Jürgen Probsta ◽  
Heike Löchela ◽  
Christoph Braigb ◽  
Christian Seifertb ◽  
Alexei Erkob
1995 ◽  
Vol 66 (1) ◽  
pp. 703-705
Author(s):  
B. A. Remington ◽  
R. I. Morales

Author(s):  
Claudio Ferrari ◽  
Riccardo Lolli ◽  
Bianca Salmaso ◽  
Giovanni Pareschi ◽  
Gianpiero Tagliaferri ◽  
...  
Keyword(s):  
X Ray ◽  

2016 ◽  
Vol 41 (2) ◽  
pp. 281 ◽  
Author(s):  
Istvan Mohacsi ◽  
Ismo Vartiainen ◽  
Manuel Guizar-Sicairos ◽  
Petri Karvinen ◽  
Vitaliy A. Guzenko ◽  
...  

2016 ◽  
Author(s):  
Frank Seiboth ◽  
Maik Kahnt ◽  
Maria Scholz ◽  
Martin Seyrich ◽  
Felix Wittwer ◽  
...  

1989 ◽  
Vol 160 ◽  
Author(s):  
David D. Allred ◽  
Qi Wang ◽  
Jesus Gonzalez-Hernandez

AbstractLaser Raman spectroscopy has been found to be useful for characterizing amorphous semiconductor multilayers, especially the interfaces of multilayers. Recently, we have extended this technique to the characterization of magnetron sputtered multilayers commonly used as reflectors in soft x-ray optics. Unlike the multilayers previously studied which contained only semiconductors and dielectrics, these are generally semiconductor/metal multilayers. We report here on the Raman characterization of the most common class of multilayers used in soft x-ray optics, those that contain a high density metal like tungsten interspersed with layers of carbon. In all of the metal/carbon multilayers the dominate feature in the Raman spectra is due to a-C. The a-C spectra consists of a broad peak at about 1560 cm-1 (G-peak) and a shoulder at about 1400 cm-1 (D-peak). This can be deconvoluted with Gaussian line shapes to yield two peaks (one at about 1560 to 1570 cm-1 and the other at about 1380 to 1420 cm-1). Among the W/C multilayer samples peak positions and relative magnitudes changed little with carbon thickness over the range of 1 to 12 nm. Significant differences are, however, seen as the identity of the metal component is altered or, especially, as the preparations are varied. For example, the intensity ratio of the D-peak to G-peak was much larger for multilayer samples prepared under conditions of good plasma confinement.


2008 ◽  
Vol 63 (1) ◽  
pp. 76-80 ◽  
Author(s):  
Tianxi Sun ◽  
Xunliang Ding ◽  
Zhiguo Liu ◽  
Guanghua Zhu ◽  
Yude Li ◽  
...  
Keyword(s):  

1991 ◽  
Author(s):  
Patrick A. Kearney ◽  
Jon M. Slaughter ◽  
Charles M. Falco

2013 ◽  
Vol 201 ◽  
pp. 21-64 ◽  
Author(s):  
Hardev Singh Virk

One-dimensional nanowires (NWs) have attracted considerable attention in recent years because of their novel physical properties and potential applications as interconnects in nanometre-scale electronics. NWs have potential applications in nanoscale electronics, optoelectronics, photonics, sensors, and solar cells due to their unique electrical, chemical, and optical properties. Several chemical and physical methods are commonly used to produce NWs. Among them, electrochemical synthesis and vapour-liquid-solid (VLS) methods to produce NWs have become popular among scientific workers due to a number of advantages. Synthesis of NWs using anodic alumina and polymer templates in an electrochemical cell has been described in detail as investigated in our laboratory. Characterization of metal and semiconductor NWs has been accomplished using scanning electron microscope (SEM), field emission scanning electron microscope (FESEM), high resolution transmission microscope (HRTEM), X-ray diffraction (XRD), and energy dispersive X-ray analysis (EDAX). Morphology of NWs has been revealed by SEM, structure by TEM, crystallinity by XRD and chemical composition by EDAX. I-V characteristics of copper and semiconductor NWs were recorded in-situ, as grown in pores of anodic alumina template, using Dual Source Meter (Keithley Model 4200 SCS) with platinum probes for contacts. Resonating tunneling diode (RTD) characteristics of fabricated NWs have been investigated. Bulk production of Copper NWs has been described by seed growth technique. Applications of NWs are not covered in any detail under this review. Table of Contents


2011 ◽  
Vol 19 (22) ◽  
pp. 21333 ◽  
Author(s):  
Joan Vila-Comamala ◽  
Ana Diaz ◽  
Manuel Guizar-Sicairos ◽  
Alexandre Mantion ◽  
Cameron M. Kewish ◽  
...  

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