Silicon photonic wire Bragg grating for on-chip wavelength (de)multiplexing employing ring resonators

2011 ◽  
Author(s):  
P. Muellner ◽  
R. Bruck ◽  
M. Karl ◽  
M. Baus ◽  
T. Wahlbrink ◽  
...  
Keyword(s):  
Ring Resonators ◽  
Bragg Grating ◽  
Silicon Photonic ◽  
On Chip ◽  
Photonic Wire

Silicon photonic wire circuits for on-chip optical interconnects

2008 ◽  
Author(s):  
William M. J. Green ◽  
Fengnian Xia ◽  
Solomon Assefa ◽  
Michael J. Rooks ◽  
Lidija Sekaric ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Silicon Photonic ◽  
On Chip ◽  
Photonic Wire

scholarly journals Microfluidic Packaging Integration with Electronic-Photonic Biosensors Using 3D Printed Transfer Molding

Biosensors ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 177
Author(s):  
Christos Adamopoulos ◽  
Asmaysinh Gharia ◽  
Ali Niknejad ◽  
Vladimir Stojanović ◽  
Mekhail Anwar
Keyword(s):  
Three Dimensional ◽  
Ring Resonators ◽  
Molecular Sensing ◽  
Transfer Molding ◽  
Silicon Photonic ◽  
3D Printed ◽  
On Chip ◽  
Packaging Strategy ◽  
Photonic Biosensors ◽  
Meso Scale

Multiplexed sensing in integrated silicon electronic-photonic platforms requires microfluidics with both high density micro-scale channels and meso-scale features to accommodate for optical, electrical, and fluidic coupling in small, millimeter-scale areas. Three-dimensional (3D) printed transfer molding offers a facile and rapid method to create both micro and meso-scale features in complex multilayer microfluidics in order to integrate with monolithic electronic-photonic system-on-chips with multiplexed rows of 5 μm radius micro-ring resonators (MRRs), allowing for simultaneous optical, electrical, and microfluidic coupling on chip. Here, we demonstrate this microfluidic packaging strategy on an integrated silicon photonic biosensor, setting the basis for highly multiplexed molecular sensing on-chip.

Broadband on-chip integrator based on silicon photonic phase-shifted Bragg grating

2017 ◽  
Vol 5 (3) ◽  
pp. 182 ◽  
Author(s):  
Xu Wang ◽  
Feng Zhou ◽  
Siqi Yan ◽  
Yuan Yu ◽  
Jianji Dong ◽  
...  
Keyword(s):  
Bragg Grating ◽  
Silicon Photonic ◽  
On Chip

Ultra-Small Silicon Photonic Wire Waveguide Devices

2009 ◽  
Vol E92-C (2) ◽  
pp. 217-223 ◽  
Author(s):  
Tao CHU ◽  
Hirohito YAMADA ◽  
Shigeru NAKAMURA ◽  
Masashige ISHIZAKA ◽  
Masatoshi TOKUSHIMA ◽  
...  
Keyword(s):  
Waveguide Devices ◽  
Silicon Photonic ◽  
Photonic Wire

scholarly journals Purcell-Enhanced and Indistinguishable Single-Photon Generation from Quantum Dots Coupled to On-Chip Integrated Ring Resonators

Nano Letters ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 6357-6363 ◽  
Author(s):  
Łukasz Dusanowski ◽  
Dominik Köck ◽  
Eunso Shin ◽  
Soon-Hong Kwon ◽  
Christian Schneider ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Ring Resonators ◽  
On Chip ◽  
Photon Generation

scholarly journals Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2377-2385 ◽  
Author(s):  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Michael Galili ◽  
Lars Hagedorn Frandsen ◽  
Hao Hu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Double Layer ◽  
Slow Light ◽  
Modulation Depth ◽  
Photonic Crystal Waveguide ◽  
Optical Modulators ◽  
Layer Graphene ◽  
Silicon Photonic ◽  
On Chip ◽  
Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

Silicon photonic devices for mid-infrared applications

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar
Keyword(s):  
Gas Sensing ◽  
Wavelength Region ◽  
Photonic Devices ◽  
Ring Resonators ◽  
Space Communications ◽  
Mid Infrared ◽  
Silicon Photonic ◽  
Processing Techniques ◽  
Silicon Based

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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