scholarly journals Enhanced optical output and reduction of the quantum-confined Stark effect in surface plasmon-enhanced green light-emitting diodes with gold nanoparticles

2016 ◽  
Vol 24 (7) ◽  
pp. 7488 ◽  
Author(s):  
Chu-Young Cho ◽  
Seong-Ju Park
Keyword(s):  
Gold Nanoparticles ◽  
Surface Plasmon ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Optical Output ◽  
Quantum Confined

Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles

2011 ◽  
Vol 98 (5) ◽  
pp. 051106 ◽  
Author(s):  
Chu-Young Cho ◽  
Sang-Jun Lee ◽  
Jung-Hoon Song ◽  
Sang-Hyun Hong ◽  
Song-Mae Lee ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Output Power ◽  
Surface Plasmon ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Optical Output Power ◽  
Optical Output

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

2012 ◽  
Vol 101 (12) ◽  
pp. 121919 ◽  
Author(s):  
Suman De ◽  
Arunasish Layek ◽  
Sukanya Bhattacharya ◽  
Dibyendu Kumar Das ◽  
Abdul Kadir ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Luminescent Centers

scholarly journals Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

2018 ◽  
Vol 123 (10) ◽  
pp. 105702 ◽  
Author(s):  
Malleswararao Tangi ◽  
Pawan Mishra ◽  
Bilal Janjua ◽  
Aditya Prabaswara ◽  
Chao Zhao ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Amber Light ◽  
Quantum Disk ◽  
Quantum Confined

Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

2008 ◽  
Vol 41 (16) ◽  
pp. 165105 ◽  
Author(s):  
Hisashi Masui ◽  
Junichi Sonoda ◽  
Nathan Pfaff ◽  
Ingrid Koslow ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined
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