Difference-frequency mixing in AgGaS_2 by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm
1995 ◽
Vol 114
(1-2)
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pp. 141-146
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2007 ◽
Vol 24
(9)
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pp. 2509
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Keyword(s):
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1974 ◽
Vol 22
(12)
◽
pp. 1100-1103
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2005 ◽
Vol 247
(1-3)
◽
pp. 205-212
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