AlGaAs-based vertical-external-cavity surface-emitting laser exceeding 4  W of direct emission power in the 740–790  nm spectral range

2018 ◽  
Vol 43 (7) ◽  
pp. 1578 ◽  
Author(s):  
Hermann Kahle ◽  
Kostiantyn Nechay ◽  
Jussi-Pekka Penttinen ◽  
Antti Tukiainen ◽  
Sanna Ranta ◽  
...  
2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Artur Broda ◽  
Bartosz Jeżewski ◽  
Iwona Sankowska ◽  
Michał Szymański ◽  
Paweł Hoser ◽  
...  

AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.


2006 ◽  
Vol 14 (14) ◽  
pp. 6479 ◽  
Author(s):  
A. Härkönen ◽  
M. Guina ◽  
O. Okhotnikov ◽  
K. Rößner ◽  
M. Hümmer ◽  
...  

Author(s):  
Hoy-My Phung ◽  
Philipp Tatar-Mathes ◽  
Cyril Paranthoen ◽  
Christophe Levallois ◽  
Nicolas Chevalier ◽  
...  

2022 ◽  
Vol 28 (1) ◽  
pp. 1-7
Author(s):  
Davide Priante ◽  
Mingyang Zhang ◽  
Alexander R. Albrecht ◽  
Roman Bek ◽  
Michael Zimmer ◽  
...  

2018 ◽  
Vol 27 (8) ◽  
pp. 084205
Author(s):  
Lidan Jiang ◽  
Renjiang Zhu ◽  
Maohua Jiang ◽  
Dingke Zhang ◽  
Yuting Cui ◽  
...  

2007 ◽  
Vol 54 (12) ◽  
pp. 1677-1683 ◽  
Author(s):  
J.-M. Hopkins ◽  
R. D. Preston ◽  
A. J. Maclean ◽  
S. Calvez ◽  
H. Sun ◽  
...  

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