Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser
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AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.
2011 ◽
Vol 335
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pp. 4-9
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2020 ◽
Vol 1697
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pp. 012178
2001 ◽
Vol 228
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pp. 99-102
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2013 ◽
Vol 25
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pp. 1523-1526