Improving the efficiency of nanowire based ultraviolet light emitting diode

2015 ◽  
Author(s):  
Yuanpeng Wu ◽  
Ying Liu ◽  
Tawfique Hasan ◽  
Pengfei Xu ◽  
Xiaowei Liu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Electron Tunneling ◽  
Light Emitting Diode ◽  
Vapour Phase ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Near Ultraviolet ◽  
Metal Organic ◽  
Organic Vapour

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction

2013 ◽  
Vol 370 ◽  
pp. 314-318 ◽  
Author(s):  
Byung Oh Jung ◽  
Yong Hun Kwon ◽  
Dong Ju Seo ◽  
Dong Seon Lee ◽  
Hyung Koun Cho
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Zno Nanowire ◽  
Light Emitting

AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template

2019 ◽  
Vol 794 ◽  
pp. 8-12 ◽  
Author(s):  
Ruxue Ni ◽  
Chang-Cheng Chuo ◽  
Kun Yang ◽  
Yujie Ai ◽  
Lian Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Light Emitting
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