A relation between a filling ratio and a length of silicon nanowires on their solar cell performances

Author(s):  
Jin-Young Jung ◽  
Keya Zhou ◽  
Han-Don Um ◽  
Sang-Won Jee ◽  
Kwang-Tae Park ◽  
...  
2011 ◽  
Vol 1305 ◽  
Author(s):  
Xiaobing Xie ◽  
Xiangbo Zeng ◽  
Wenjie Yao ◽  
Ping Yang ◽  
Shiyong Liu ◽  
...  

ABSTRACTWe made an amorphous-silicon (a-Si) solar cell with a nanowire-array structure on stainless steel(SS) by plasma enhanced chemical vapor (PECVD) deposition. This nanowire structure has an n-type Si nanowire array in which a-Si intrinsic layer and p type layer are sequentially grown on the surface of the nanowire. The highest open-circuit voltage (Voc) and short-circuit current density (Jsc) for AM 1.5 illumination were 620 mV and 13.4 mA/cm2, respectively at a maximum power conversion efficiency of 3.57%.


2009 ◽  
Vol 95 (14) ◽  
pp. 143112 ◽  
Author(s):  
Joondong Kim ◽  
Ju-Hyung Yun ◽  
Chang-Soo Han ◽  
Yong Jae Cho ◽  
Jeunghee Park ◽  
...  
Keyword(s):  

2013 ◽  
Vol 52 (9R) ◽  
pp. 092301 ◽  
Author(s):  
Kyeom Seon Do ◽  
Min Gu Kang ◽  
Je Jun Park ◽  
Gi Hwan Kang ◽  
Jae-Min Myoung ◽  
...  

Nanoscale ◽  
2016 ◽  
Vol 8 (14) ◽  
pp. 7761-7767 ◽  
Author(s):  
Junhee Kim ◽  
Cho-long Jung ◽  
Minsoo Kim ◽  
Soomin Kim ◽  
Yoonmook Kang ◽  
...  

2021 ◽  
Vol 17 ◽  
Author(s):  
Abdelbasset Bessadok J ◽  
Mohamed Ben Rabha ◽  
F. Abdulraqeb Ahmed Ali ◽  
Salim Mokraoui ◽  
Lotfi Khezami

Introduction: Silver nanoparticle (AgNP)-based chemical etching is applied to produce silicon nanowires (SiNWs) on monocrystalline silicon. Methods: The effect of etching time on the production of silicon nanowires and on optical and optoelectronic properties was studied. Results: Using this approach, surface recombination velocity (Seff) and the effective lifetime (τeff) evolution of SiNWs after passivation were improved, and SiNWs obtained in the optimal time of 20 min, exhibited shallow reflection of 1% in the wavelength range of 300–1100 nm. Conclusion: Thus, passivated solar cell-based SiNWs in an HF/HNO3/H2O solution were essential for increasing the efficiency of solar cell-based SiNWs from 9% to nearly 15%.


2019 ◽  
Vol 126 ◽  
pp. 42-48 ◽  
Author(s):  
Yu-Keng Lin ◽  
Yu-Ting Hong ◽  
Jing-Jong Shyue ◽  
Chun-Hway Hsueh

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Firoz Khan ◽  
Seong-Ho Baek ◽  
Jae Hyun Kim

The dependence of performance of silicon nanowires (SiNWs) solar cells on the growth condition of the SiNWs has been described. Metal-assisted electroless etching (MAE) technique has been used to grow SiNWs array. Different concentration of aqueous solution containing AgNO3and HF for Ag deposition is used. The diameter and density of SiNWs are found to be dependent on concentration of solution used for Ag deposition. The diameter and density of SiNWs have been used to calculate the filling ratio of the SINWs arrays. The filling ratio is increased with increase in AgNO3concentration, whereas it is decreased with increase in HF concentration. The minimum reflectance value achieved is ~1% for SiNWs of length of ~1.2 μm in the wavelength range of 300–1000 nm. The performance and diode parameters strongly depend on the geometry of SiNWs. The maximum short circuit current density achieved is 35.6 mA/cm2. The conversion efficiency of solar cell is 9.73% for SiNWs with length, diameter, and wire density of ~1.2 μm, ~75 nm, and 90 μm−2, respectively.


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