Nanostructure, optical and optoelectronic properties of silver nanoparticle-based chemical etching on monocrystalline silicon for solar cell applications

2021 ◽  
Vol 17 ◽  
Author(s):  
Abdelbasset Bessadok J ◽  
Mohamed Ben Rabha ◽  
F. Abdulraqeb Ahmed Ali ◽  
Salim Mokraoui ◽  
Lotfi Khezami
Keyword(s):  
Solar Cell ◽  
Silver Nanoparticle ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Monocrystalline Silicon ◽  
Optoelectronic Properties ◽  
Surface Recombination Velocity ◽  
Optimal Time ◽  
Etching Time ◽  
Effective Lifetime

Introduction: Silver nanoparticle (AgNP)-based chemical etching is applied to produce silicon nanowires (SiNWs) on monocrystalline silicon. Methods: The effect of etching time on the production of silicon nanowires and on optical and optoelectronic properties was studied. Results: Using this approach, surface recombination velocity (Seff) and the effective lifetime (τeff) evolution of SiNWs after passivation were improved, and SiNWs obtained in the optimal time of 20 min, exhibited shallow reflection of 1% in the wavelength range of 300–1100 nm. Conclusion: Thus, passivated solar cell-based SiNWs in an HF/HNO3/H2O solution were essential for increasing the efficiency of solar cell-based SiNWs from 9% to nearly 15%.

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

scholarly journals Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chien-Wei Liu ◽  
Chin-Lung Cheng ◽  
Bau-Tong Dai ◽  
Chi-Han Yang ◽  
Jun-Yuan Wang
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Low Cost ◽  
Light Trapping ◽  
Silicon Nanowire ◽  
Great Promise ◽  
Etching Time ◽  
Wet Chemical ◽  
Wet Chemical Etching

Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW) solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs) declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching

2020 ◽  
Vol 92 (3) ◽  
pp. 30402
Author(s):  
Shiying Zhang ◽  
Zhenhua Li ◽  
Qingjun Xu
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Optimal Solution ◽  
Solution Concentration ◽  
Etching Time ◽  
Si Nanowires ◽  
Selected Area Electron Diffraction ◽  
Initial Silicon ◽  
Metal Assisted Chemical Etching

Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.

Study of magnetoconductance effect in silicon nanowires formed by chemical etching in HF/AgNO 3 solution: Effect of etching time

2017 ◽  
Vol 463 ◽  
pp. 54-58 ◽  
Author(s):  
B. Chouaibi ◽  
M. Radaoui ◽  
N. Nafie ◽  
A. Ben Fredj ◽  
S. Romdhane ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Etching Time

scholarly journals Influence of Surface Morphology on the Effective Lifetime and Performance of Silicon Heterojunction Solar Cell

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Shui-Yang Lien ◽  
Yun-Shao Cho ◽  
Yan Shao ◽  
Chia-Hsun Hsu ◽  
Chia-Chi Tsou ◽  
...  
Keyword(s):  
Solar Cell ◽  
Surface Morphology ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Short Circuit ◽  
Turning Points ◽  
Minority Carrier Lifetime ◽  
Heterojunction Solar Cell ◽  
Etching Time ◽  
Effective Lifetime

Different etching times are used to etch silicon wafers. Effects of surface morphology on wafer minority carrier lifetime, passivation quality, and heterojunction solar cell (HJ) performance are investigated. The numbers of mountains and valleys, defined as turning points, on wafer surfaces are used to explain the minority carrier lifetime variations. For a wafer with a smaller amount of turning points, hydrogenated amorphous silicon (a-Si:H) passivation quality can be comparable to ideal iodine-ethanol solution passivation. If the wafer has a notable amount of turning points, the carrier lifetime decreases as the a-Si:H layer will not be able to be well-deposited on turning points. Furthermore, the PC1D simulation indicates that an optimal device conversion efficiency of 21.94% can be achieved at an etching time of 60 min, where a best combination of short-circuit current and open-circuit voltage is obtained.

scholarly journals Characterization of Si nanowires synthesized using metal-assisted wet-chemical etching

2014 ◽  
Vol 8 (3) ◽  
Author(s):  
Eman S. M. Ashour ◽  
M.Y. Sulaiman ◽  
N. Amin ◽  
Z. Ibrahim
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Growth Parameters ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Nanowire Array ◽  
Solution Concentration ◽  
Etching Time ◽  
Si Nanowires ◽  
Potential Applications

A synthesis of vertical silicon nanowire array through metal-assisted chemical etching of highly doped p-type silicon wafers (100) in a solution of hydrofluoric acid and silver nitrate has been proposed. . The influences of the growth parameters such as solution concentration, etching time have been investigated. In addition, we consider other common parameters like wafer resistivity and temperature, which rely on the silicon nanowires formation. The results indicate that the silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer. Furthermore, They provide excellent antireflection property with a low reflection loss of 3% for incident light within the wavelength range of 200–900 nm. Such nanowire arrays may have potential applications as antireflection surface for silicon solar cells

Effect of Wet Etching Parameter on the Diameter and Length of Silicon Nanowires

2011 ◽  
Vol 483 ◽  
pp. 584-588
Author(s):  
Yang He ◽  
Cheng Yu Jiang ◽  
Heng Xu Yin ◽  
Chen Jun ◽  
Wei Zheng Yuan
Keyword(s):  
Silver Nanoparticle ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Wet Etching ◽  
Solution Temperature ◽  
Etching Time ◽  
Silicon Substrates ◽  
Etching Method

A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter on the silver nanoparticle forming including concentration of AgNO3, immersing time and solution temperature, and the effect of etching time on the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact to diameter of silicon nanowires than concentration of AgNO3 and immersing time and longer etching time may result in longer silicon nanowires.

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