Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

1999 ◽  
Vol 75 (17) ◽  
pp. 2575-2577 ◽  
Author(s):  
C. Kadow ◽  
S. B. Fleischer ◽  
J. P. Ibbetson ◽  
J. E. Bowers ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Si Substrates ◽  
Gaas On Si ◽  
Low Temperature Grown Gaas

GaInAs / GaAsP buffer layers for low temperature grown GaAs on Si substrates

1993 ◽  
Vol 127 (1-4) ◽  
pp. 116-120 ◽  
Author(s):  
Y. González ◽  
L. González ◽  
F. Briones
Keyword(s):  
Low Temperature ◽  
Buffer Layers ◽  
Si Substrates ◽  
Gaas On Si ◽  
Low Temperature Grown Gaas

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Fermi level of low-temperature-grown GaAs on Si-δ-doped GaAs

1995 ◽  
Vol 51 (23) ◽  
pp. 17215-17218 ◽  
Author(s):  
T. M. Hsu ◽  
W. C. Lee ◽  
J. R. Wu ◽  
J.-I. Chyi
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Gaas On Si ◽  
Low Temperature Grown Gaas

Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1888-1891 ◽  
Author(s):  
Cheng Chiang Phua ◽  
Tow Chong Chong ◽  
Wai Shing Lau ◽  
Rong Zhao ◽  
Dong Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Diodes ◽  
Si Substrates ◽  
Low Temperature Grown Gaas
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