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Nanoscale Semiconductor Processes Using STM and AFM Lithographies. AFM Nano-oxidation of Atomically-flat Ti Film and Its Application to Single Electron Transistor.
Hyomen Kagaku
◽
10.1380/jsssj.19.742
◽
1998
◽
Vol 19
(11)
◽
pp. 742-746
◽
Cited By ~ 1
Author(s):
Kazuhiko MATSUMOTO
Keyword(s):
Single Electron
◽
Single Electron Transistor
◽
Atomically Flat
Download Full-text
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Single Electron Transistor on Atomically Flat α-Al2O3 Substrate Made by AFM Nano-Oxidation Process
10.7567/ssdm.1997.b-14-4
◽
1997
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Author(s):
Kazuhiko Matsumoto
◽
Yoshitaka Gotoh
◽
Jun-ichi Shirakashi
◽
Tatsuro Maeda
◽
James S. Harris
Keyword(s):
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◽
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Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al2O3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
10.7567/ssdm.1998.c-5-2
◽
1998
◽
Author(s):
Kazuhiko Matsumoto
◽
Yoshitaka Gotoh
◽
Tatsuro Maeda
◽
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◽
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◽
Oxidation Process
◽
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Single Electron
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◽
Coulomb Oscillation
◽
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◽
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Evidence for activated conduction in a single electron transistor
Journal of Applied Physics
◽
10.1063/1.1322066
◽
2001
◽
Vol 89
(1)
◽
pp. 410-419
◽
Cited By ~ 23
Author(s):
Nicole Y. Morgan
◽
David Abusch-Magder
◽
Marc A. Kastner
◽
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◽
Hiroyuki Tamura
◽
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Single Electron
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Modeling and simulation of single electron transistor with master equation approach
Journal of Physics Conference Series
◽
10.1088/1742-6596/739/1/012048
◽
2016
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Vol 739
◽
pp. 012048
◽
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◽
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Modeling And Simulation
◽
Master Equation
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Single Electron
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◽
Equation Approach
◽
Master Equation Approach
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The current analysis of a single electron transistor based on double graphene nanoscroll island
Solid State Communications
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pp. 114234
Author(s):
Vahideh Khademhosseini
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Keyword(s):
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Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor
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10.1007/s11664-020-08663-0
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Kumar Gaurav
◽
Boddepalli SanthiBhushan
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Ravi Mehla
◽
Anurag Srivastava
Keyword(s):
Gas Sensor
◽
Single Electron
◽
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Toxic Gas
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Charge transport and photon-assisted tunneling in the NSN single-electron transistor
Physica B Condensed Matter
◽
10.1016/0921-4526(94)90077-9
◽
1994
◽
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◽
pp. 327-339
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◽
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◽
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◽
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◽
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Charge Transport
◽
Single Electron
◽
Single Electron Transistor
◽
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Conductance of the single-electron transistor for arbitrary tunneling strength
Physical Review B
◽
10.1103/physrevb.62.9955
◽
2000
◽
Vol 62
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◽
pp. 9955-9958
◽
Cited By ~ 8
Author(s):
Georg Göppert
◽
Bruno Hüpper
◽
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Single electron transistor: Energy-level broadening effect and thermionic contribution
Semiconductors
◽
10.1134/s1063782617120144
◽
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◽
B. Hafsi
◽
A. Kalboussi
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◽
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Molecular single-electron transistor on basis of planar nanostructure
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10.1109/crmico.2010.5632918
◽
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