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Single Electron Transistor on Atomically Flat α-Al2O3 Substrate Made by AFM Nano-Oxidation Process
Mapping Intimacies
◽
10.7567/ssdm.1997.b-14-4
◽
1997
◽
Author(s):
Kazuhiko Matsumoto
◽
Yoshitaka Gotoh
◽
Jun-ichi Shirakashi
◽
Tatsuro Maeda
◽
James S. Harris
Keyword(s):
Oxidation Process
◽
Single Electron
◽
Single Electron Transistor
◽
Al2o3 Substrate
◽
Α Al2o3
◽
Atomically Flat
Download Full-text
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Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al2O3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
10.7567/ssdm.1998.c-5-2
◽
1998
◽
Author(s):
Kazuhiko Matsumoto
◽
Yoshitaka Gotoh
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Tatsuro Maeda
◽
John A. Dagata
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Keyword(s):
Room Temperature
◽
Oxidation Process
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Pulse Mode
◽
Single Electron
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Single Electron Transistor
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Al2o3 Substrate
◽
Coulomb Oscillation
◽
Α Al2o3
◽
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Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
Japanese Journal of Applied Physics
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2010
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Vol 49
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Room Temperature
◽
Oxidation Process
◽
Channel Structure
◽
Single Electron
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Single Electron Transistor
◽
Recessed Channel
◽
Room Temperature Operation
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Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat α-alumina substrate
Applied Physics Letters
◽
10.1063/1.125714
◽
2000
◽
Vol 76
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◽
pp. 239-241
◽
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Author(s):
Kazuhiko Matsumoto
◽
Yoshitaka Gotoh
◽
Tatsuro Maeda
◽
John A. Dagata
◽
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Keyword(s):
Atomic Force Microscopy
◽
Room Temperature
◽
Oxidation Process
◽
Pulse Mode
◽
Alumina Substrate
◽
Single Electron
◽
Force Microscopy
◽
Atomic Force
◽
Atomically Flat
◽
Mode Atomic Force Microscopy
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Fabrication of single electron memory on atomically flat α-Al/sub 2/O/sub 3/ substrate made by AFM nano-oxidation process
International Electron Devices Meeting. IEDM Technical Digest
◽
10.1109/iedm.1997.650286
◽
2002
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Keyword(s):
Oxidation Process
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Room temperature operated single electron transistor made by a scanning tunnelling microscopy/atomic force microscopy nano-oxidation process
International Journal of Electronics
◽
10.1080/002072199133292
◽
1999
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pp. 641-662
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KAZUHIKO MATSUMOTO
Keyword(s):
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◽
Room Temperature
◽
Oxidation Process
◽
Scanning Tunnelling Microscopy
◽
Single Electron
◽
Single Electron Transistor
◽
Force Microscopy
◽
Atomic Force
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Scanning Tunnelling
◽
Tunnelling Microscopy
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Nanoscale Semiconductor Processes Using STM and AFM Lithographies. AFM Nano-oxidation of Atomically-flat Ti Film and Its Application to Single Electron Transistor.
Hyomen Kagaku
◽
10.1380/jsssj.19.742
◽
1998
◽
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◽
pp. 742-746
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Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
10.7567/ssdm.1996.sympo.iii-2
◽
1996
◽
Author(s):
Kazuhiko MATSUMOTO
◽
Masami ISHII
◽
Jun-ichi SHIRAKASHI
◽
Bartev J. VARTANIAN
◽
James S. HARRIS
Keyword(s):
Room Temperature
◽
Oxidation Process
◽
Single Electron
◽
Single Electron Transistor
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Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by AFM Nano-Oxidation Process
10.7567/ssdm.1999.d-5-2
◽
1999
◽
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Y. Gotoh
◽
K. Matsumoto
◽
V. Bubanja
◽
F. Vazquez
◽
T. Maeda
◽
...
Keyword(s):
Room Temperature
◽
Oxidation Process
◽
Single Electron
◽
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Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
10.7567/ssdm.1995.s-ii-5
◽
1995
◽
Cited By ~ 1
Author(s):
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◽
Masami ISHII
◽
Kazuhito SEGAWA
◽
Yasushi OKA
◽
Bartev J. VARTANIAN
◽
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Keyword(s):
Room Temperature
◽
Oxidation Process
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Single Electron
◽
Single Electron Transistor
◽
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Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
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10.1116/1.582347
◽
2000
◽
Vol 18
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◽
pp. 1321-1325
◽
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◽
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◽
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Keyword(s):
Atomic Force Microscope
◽
Room Temperature
◽
Oxidation Process
◽
Single Electron
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Single Electron Transistor
◽
Atomic Force
◽
Theoretical Results
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