scholarly journals Low Temperature Formation of SiO2 Thin Films by Nitric Acid Oxidation of Si and Electrical Characterization of the Film

Hyomen Kagaku ◽  
2008 ◽  
Vol 29 (8) ◽  
pp. 498-502 ◽  
Author(s):  
Taketoshi MATSUMOTO ◽  
Kentaro IMAMURA ◽  
Hikaru KOBAYASHI
Keyword(s):  
Thin Films ◽  
Nitric Acid ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1939-1941 ◽  
Author(s):  
T. Matsumoto ◽  
Asuha ◽  
W.-B. Kim ◽  
M. Yamada ◽  
S. Imai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nitric Acid ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Low temperature fabrication of 5–10nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method

2010 ◽  
Vol 256 (18) ◽  
pp. 5610-5613 ◽  
Author(s):  
Yousuke Fukaya ◽  
Takashi Yanase ◽  
Yasushi Kubota ◽  
Shigeki Imai ◽  
Taketoshi Matsumoto ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation
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