Review of Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Author(s):  
Natalie Plank
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pp. 5309-5315 ◽  
Author(s):  
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R. Thomas Weitz ◽  
H. Jens Böttcher ◽  
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...  

ACS Nano ◽  
2014 ◽  
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pp. 6840-6848 ◽  
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Hyeyeon Ryu ◽  
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2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
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pp. 243509 ◽  
Author(s):  
Yeong Don Park ◽  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
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...  

Author(s):  
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RSC Advances ◽  
2014 ◽  
Vol 4 (85) ◽  
pp. 45082-45087 ◽  
Author(s):  
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Wi Hyoung Lee ◽  
Hyun Ho Choi ◽  
Yeong Don Park ◽  
Kilwon Cho

We systematically investigated the effects of a self-assembled monolayer (SAM), prepared on the gate dielectric, on the performances of bottom-gate organic field-effect transistor (OFET) devices under various humid environments.


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