Light harvester band gap engineering in excitonic solar cells: A case study on semiconducting quantum dots sensitized rainbow solar cells

ENERGYO ◽  
2018 ◽  
Author(s):  
Isabella Concina ◽  
Gurpreet S. Selopal ◽  
Riccardo Milan ◽  
Giorgio Sberveglieri ◽  
Alberto Vomiero
2014 ◽  
Vol 86 (5) ◽  
pp. 575-584 ◽  
Author(s):  
Isabella Concina ◽  
Gurpreet S. Selopal ◽  
Riccardo Milan ◽  
Giorgio Sberveglieri ◽  
Alberto Vomiero

Abstract A systematic study on the fabrication of quantum dots sensitized solar cells (QDSSCs) exploiting hybrid networks of semiconducting light harvesters is presented, which shows how the engineering of band gaps of the device components by a very simple technique allows improving the solar energy conversion performances. Panchromatic devices are fabricated and tested, and correspondent functional parameters analyzed in order to highlight both advantages and drawbacks of the most common (CdS, CdSe, PbS) quantum dots applied for light collection in QDSSCs. Judicious engineering of the light harvester layer is demonstrated as a simple and powerful strategy for boosting device performances, through the management of light collection in a rather broad range of solar spectrum and photogenerated charges injection and collection.


2018 ◽  
Vol 86 ◽  
pp. 424-432 ◽  
Author(s):  
S.R. Munishwar ◽  
P.P. Pawar ◽  
S.Y. Janbandhu ◽  
R.S. Gedam

2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.


2004 ◽  
Vol 81 (1) ◽  
pp. 73-86 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
Francisco A. Rubinelli ◽  
Wim M. Arnoldbik ◽  
Jatindra K. Rath ◽  
Ruud E.I. Schropp

2006 ◽  
Vol 110 (43) ◽  
pp. 21899-21902 ◽  
Author(s):  
M. Dürr ◽  
S. Rosselli ◽  
A. Yasuda ◽  
G. Nelles

2019 ◽  
Author(s):  
Sofia Masi ◽  
Carlos Echeverría-Arrondo ◽  
Salim K.P. Muhammed ◽  
Thi Tuyen Ngo ◽  
Perla F. Méndez ◽  
...  

<b>The extraordinary low non-radiative recombination and band gap versatility of halide perovskites have led to considerable development in optoelectronic devices. However, this versatility is limited by the stability of the perovskite phase, related to the relative size of the different cations and anions. The most emblematic case is that of formamidinium lead iodine (FAPI) black phase, which has the lowest band gap among all 3D lead halide perovskites, but quickly transforms into the non-perovskite yellow phase at room temperature. Efforts to optimize perovskite solar cells have largely focused on the stabilization of FAPI based perovskite structures, often introducing alternative anions and cations. However, these approaches commonly result in a blue-shift of the band gap, which limits the maximum photo-conversion efficiency. Here, we report the use of PbS colloidal quantum dots (QDs) as stabilizing agent for the FAPI perovskite black phase. The surface chemistry of PbS plays a pivotal role, by developing strong bonds with the black phase but weak ones with the yellow phase. As a result, stable FAPI black phase can be formed at temperatures as low as 85°C in just 10 minutes, setting a record of concomitantly fast and low temperature formation for FAPI, with important consequences for industrialization. FAPI thin films obtained through this procedure preserve the original low band gap of 1.5 eV, reach a record open circuit potential (V<sub>oc</sub>) of 1.105 V -91% of the maximum theoretical V<sub>oc</sub>- and preserve high efficiency for more than 700 hours. These findings reveal the potential of strategies exploiting the chemi-structural properties of external additives to relax the tolerance factor and optimize the optoelectronic performance of perovskite materials.</b>


2006 ◽  
Vol 88 (26) ◽  
pp. 263117 ◽  
Author(s):  
Kuo-Feng Lin ◽  
Hsin-Ming Cheng ◽  
Hsu-Cheng Hsu ◽  
Wen-Feng Hsieh

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