scholarly journals (0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

2016 ◽  
Vol 34 (3) ◽  
pp. 555-563 ◽  
Author(s):  
Dongyun Guo ◽  
Yang Ju ◽  
Chengju Fu ◽  
Zhixiong Huang ◽  
Lianmeng Zhang

AbstractZinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0) substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2) preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylamino)ethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2)-oriented ZnO thin films were formed by adjusting the baking temperature.

Author(s):  
Ştefan Ţălu ◽  
Samah Boudour ◽  
Idris Bouchama ◽  
Bandar Astinchap ◽  
Hamta Ghanbaripour ◽  
...  

2011 ◽  
Vol 60 (1) ◽  
pp. 66-70 ◽  
Author(s):  
E. F. Keskenler ◽  
S. Doğan ◽  
B. Diyarbakır ◽  
S. Duman ◽  
B. Gürbulak

2014 ◽  
Vol 52 (5) ◽  
pp. 385-390 ◽  
Author(s):  
Young gyu Kim ◽  
Hyung gil Park ◽  
Ik soo Ji ◽  
Soaram Kim ◽  
Jong Su Kim ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
K. A. Eswar ◽  
J. Rouhi ◽  
H. F. Husairi ◽  
M. Rusop ◽  
S. Abdullah

ZnO nanoparticles were successfully deposited on porous silicon (PSi) substrate using spin-coating method. In order to prepare PSi, electrochemical etching was employed to modify the Si surface. Zinc acetate dihydrate was used as a starting material in ZnO sol-gel solution preparation. The postannealing treatments were investigated on morphologies and photoluminescence (PL) properties of the ZnO thin films. Field emission scanning electron microscopy (FESEM) results indicate that the thin films composed by ZnO nanoparticles were distributed uniformly on PSi. The average sizes of ZnO nanoparticle increase with increasing annealing temperature. Atomic force microscopic (AFM) analysis reveals that ZnO thin films annealed at 500°C had the smoothest surface. PL spectra show two peaks that completely correspond to nanostructured ZnO and PSi. These findings indicate that the ZnO nanostructures grown on PSi are promising for application as light emitting devices.


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