Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

nano Online ◽  
2016 ◽  
Author(s):  
Lai-Guo Wang ◽  
Xu Qian ◽  
Yan-Qiang Cao ◽  
Zheng-Yi Cao ◽  
Guo-Yong Fang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Resistive switching in high-k dielectrics for non-volatile memory applications

COMMAD 2012 ◽  
2012 ◽  
Author(s):  
R.G. Elliman ◽  
M.N. Saleh ◽  
D.K. Venkatachalam ◽  
T-H. Kim ◽  
K. Belay ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

2015 ◽  
Vol 147 ◽  
pp. 37-40 ◽  
Author(s):  
R. Ortega-Hernandez ◽  
M. Coll ◽  
J. Gonzalez-Rosillo ◽  
A. Palau ◽  
X. Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications
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