Resistive Switching Properties of ZrO2 Film by Plasma-Enhanced Atomic Layer Deposition for Non-volatile Memory Applications

2021 ◽  
Author(s):  
Aleksey A. Sivkov ◽  
Yuan Xing ◽  
Zoe Minden ◽  
Zhigang Xiao ◽  
Kuan Yew Cheong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Zro2 Film ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Atomic-Layer Deposition of Lutetium Aluminate Thin Films for Non-Volatile Memory Applications

2019 ◽  
Vol 34 (1) ◽  
pp. 473-478 ◽  
Author(s):  
Christoph Adelmann ◽  
Johan Swerts ◽  
Thierry Conard ◽  
Bert Brijs ◽  
Alexis Franquet ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

TiO2Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application

2007 ◽  
Vol 46 (4B) ◽  
pp. 2523-2526 ◽  
Author(s):  
Cha-Hsin Lin ◽  
Ching-Chiun Wang ◽  
Pei-Jer Tzeng ◽  
Siddheswar Maikap ◽  
Heng-Yuan Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory

2021 ◽  
pp. 1-1
Author(s):  
Jun-Dao Luo ◽  
Yu-Ying Lai ◽  
Kuo-Yu Hsiang ◽  
Chia-Feng Wu ◽  
Hao-Tung Chung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
Marcel Reiners ◽  
Rainer Waser ◽  
Susanne Hoffmann-Eifert
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Memory Applications ◽  
Switching Memory

Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf0.5Zr0.5O2/ TiN/SiO2/Si and TiN/HfXAl1-XOY/Pt/SiO2/Si Test Structures Obtained on the National Technological Basis

2018 ◽  
Vol 386 ◽  
pp. 172-177
Author(s):  
Oleg M. Orlov
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Nonvolatile Memory ◽  
Atomic Layer ◽  
Resistive Memory ◽  
Technological Basis ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

The properties and applications of materials with non-volatile memory based on HfO2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf0.5Zr0.5O2/ TiN/ SiO2/ Si and TiN/ HfxAl1-xOy/ Pt/ SiO2/ Si for the non-volatile memory of FeRAM and ReRAM types obtained by the atomic-layer deposition was shown. In addition, the scalability of these elements and opportunity to create promising submicron integrated circuits for ferroelectric and resistive memory were demonstrated.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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