Bipolar Resistive Switching in Magnetostrictive Ni/PZT/Pt Structure for Non-Volatile Memory Applications

2021 ◽  
Author(s):  
Savita Sharma ◽  
Surbhi Gupta ◽  
Reema Gupta ◽  
Hitesh Borkar ◽  
Ashok Kumar ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Resistive switching in high-k dielectrics for non-volatile memory applications

COMMAD 2012 ◽  
2012 ◽  
Author(s):  
R.G. Elliman ◽  
M.N. Saleh ◽  
D.K. Venkatachalam ◽  
T-H. Kim ◽  
K. Belay ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

2015 ◽  
Vol 147 ◽  
pp. 37-40 ◽  
Author(s):  
R. Ortega-Hernandez ◽  
M. Coll ◽  
J. Gonzalez-Rosillo ◽  
A. Palau ◽  
X. Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Bipolar resistive switching characteristics of samarium oxide solid electrolyte thin films for non-volatile memory applications

2019 ◽  
Vol 12 (03) ◽  
pp. 1950023
Author(s):  
Mei Ji ◽  
Yangjiang Wu ◽  
Zhengzhong Zhang ◽  
Ya Wang ◽  
Hao Liu
Keyword(s):  
Thin Films ◽  
Solid Electrolyte ◽  
Resistive Switching ◽  
High Resistance State ◽  
High Yield ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Resistance State ◽  
Volatile Memory ◽  
Oxide Solid Electrolyte

In this paper, we report the bipolar resistive switching behaviors in Ag/Sm2O3/Pt structures where the Sm2O3 thin films act as solid electrolyte layer of electrochemical metallization memory (ECM) devices. The memory devices show reproducible and stable bipolar resistive switching over 1000 cycles with a resistance ratio (high-resistance state to low-resistance state) of over 4 orders of magnitude and stable retention for over 104[Formula: see text]s at room temperature. Moreover, the benefits of high yield and multilevel storage possibility make the device promising in the next generation non-volatile memory application.

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