Effect of Spectroscopic Buffers on Transite Time τ and Diffusion D of Atoms in DC Arc Discharge

1979 ◽  
Vol 260O (1) ◽  
Author(s):  
A. A. Fakhry ◽  
A. Nasr Alla ◽  
M. S. Hashem
Keyword(s):  
Arc Discharge ◽  
Dc Arc ◽  
And Diffusion

scholarly journals On-Demand Metal-Oxide Polycrystalline Films Deposited byReactive Plasma Deposition with Dc-Arc Discharge

2019 ◽  
Vol 55 (11) ◽  
pp. 404-413
Author(s):  
Tetsuya YAMAMOTO ◽  
Hisashi KITAMI ◽  
Makoto MAEHARA ◽  
Yutaka FURUBAYASHI ◽  
Toshiyuki SAKEMI
Keyword(s):  
Metal Oxide ◽  
Plasma Deposition ◽  
Arc Discharge ◽  
Polycrystalline Films ◽  
On Demand ◽  
Dc Arc

scholarly journals PREPARATION OF DIAMOND FILMS BY DC ARC DISCHARGE AND IN SITU MEASUREMENTS OF THE PLASMA BY OPTICAL EMISSION SPECTRA

1990 ◽  
Vol 39 (12) ◽  
pp. 1965
Author(s):  
ZHANG FANG-QING ◽  
ZHANG YA-FEI ◽  
YANG YING-HU ◽  
LI JING-QI ◽  
CHEN GUANG-HUA ◽  
...  
Keyword(s):  
Arc Discharge ◽  
Diamond Films ◽  
Emission Spectra ◽  
Optical Emission ◽  
In Situ Measurements ◽  
Dc Arc ◽  
Optical Emission Spectra

Structural studies of diamond thin films grown from dc arc plasma

1997 ◽  
Vol 12 (10) ◽  
pp. 2533-2542 ◽  
Author(s):  
L. C. Nistor ◽  
J. Van Landuyt ◽  
V. G. Ralchenko ◽  
A. A. Smolin ◽  
K. G. Korotushenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Arc Discharge ◽  
Stacking Faults ◽  
Argon Laser ◽  
Arc Plasma ◽  
Structural Studies ◽  
Transmission Electron ◽  
Diamond Thin Films ◽  
Dc Arc

Diamond thin films grown from a dc-arc discharge in CH4/H2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH4 concentrations (3%–9%). Seeding the substrate with 5 nm diamond particles at a density of 2 × 1012 cm−1 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 1010cm−2. At 3% CH4 concentration the film grows with almost perfect crystallites. Richer CH4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20–70 nm SiC interlayer is present at these CH4 concentrations, which was not observed at 3% CH4. Amorphous sp3- and sp2-bonded carbon was detected by Raman spectroscopy at all CH4 concentrations and correlated with TEM data.

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