scholarly journals Epitaxial GaAs Films Deposited by Molecular Beam Method

1973 ◽  
Vol 93 (10) ◽  
pp. 434-440
Author(s):  
M. NAGANUMA ◽  
K. TAKAHASHI
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Beam Method ◽  
Gaas Films

Epitaxial GaAs films deposited by molecular beam method

1973 ◽  
Vol 93 (5) ◽  
pp. 19-24 ◽  
Author(s):  
M. Naganuma ◽  
K. Takahashi
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Beam Method ◽  
Gaas Films

Structural Studies of Nucleation and the Initial Stages of Growth of Epitaxial Gaas on Si(100) Substrates

1986 ◽  
Vol 82 ◽  
Author(s):  
R. Hull ◽  
A. Fischer-Colbrie ◽  
S.J. Rosner ◽  
S.M. Koch ◽  
J.S. Harris
Keyword(s):  
Molecular Beam ◽  
Gaas Layer ◽  
Island Size ◽  
Epitaxial Gaas ◽  
Stages Of Growth ◽  
Transmission Electron ◽  
Initial Nucleation ◽  
Gaas Films ◽  
Secondary Defect ◽  
Island Coalescence

ABSTRACTNucleation and growth of GaAs fIlms deposited by Molecular Beam Epitaxy upon Si(l00) substrates are studied by transmission electron microscopy. The initial nucleation of GaAs consists of approximately hemispherical islands associated with steps upon the substratesurface and coherently strained to the substrate lattice. As the island size increases, crystalline defects relax the strain between epilayer and substrate. Island coalescence is a secondary defect generation mechanism. Subsequent growth of the epitaxial GaAs layer reveals a progressive deterioration of the GaAs/Si interface planarity and the growth and eventual dissolution of amorphous or misoriented crystalline regions at the GaAs/Si interface.

Carbon tetrabromide carbon doping of molecular beam epitaxial (GaAs) films

1994 ◽  
Vol 64 (2) ◽  
pp. 202-204 ◽  
Author(s):  
W. E. Hoke ◽  
D. G. Weir ◽  
P. J. Lemonias ◽  
H. T. Hendriks
Keyword(s):  
Molecular Beam ◽  
Carbon Doping ◽  
Epitaxial Gaas ◽  
Carbon Tetrabromide ◽  
Molecular Beam Epitaxial ◽  
Gaas Films

Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

2001 ◽  
Vol 46 (4) ◽  
pp. 411-416 ◽  
Author(s):  
G. B. Galiev ◽  
V. G. Mokerov ◽  
V. V. Saraikin ◽  
Yu. V. Slepnev ◽  
G. I. Shagimuratov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Perfection ◽  
Epitaxial Gaas ◽  
Gaas Films

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method

1986 ◽  
Vol 25 (Part 2, No. 7) ◽  
pp. L598-L600 ◽  
Author(s):  
Toshio Fujii ◽  
Yoshiaki Nakata ◽  
Shunichi Muto ◽  
Satoshi Hiyamizu
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Beam Method

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial
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