Investigating the Nucleation of AlOx and HfOx ALD on Polyimide: Influence of Plasma Activation

There is an increasing interest in atomic layer deposition (ALD) on polymers for the development of membranes, electronics, (3D) nanostructures and specially for the development of hermetic packaging of the new generation of flexible implantable micro-devices. This evolution demands a better understanding of the ALD nucleation process on polymers, which has not been reported in a visual way. Herein, a visual study of ALD nucleation on polymers is presented, based on the different dry etching speeds between polymers (fast) and metal oxides (slow). An etching process removes the polyimide with the nucleating ALD acting as a mask, making the nucleation features visible through secondary electron microscopy analyses. The nucleation of both Al2O3 and HfO2 on polyimide was investigated. Both materials followed an island-coalescence nucleation. First, local islands formed, progressively coalescing into filaments, which connected and formed meshes. These meshes evolved into porous layers that eventually grew to a full layer, marking the end of the nucleation. Cross-sections were analyzed, observing no sub-surface growth. This approach was used to evaluate the influence of plasma-activating polyimide on the nucleation. Plasma-induced oxygen functionalities provided additional surface reactive sites for the ALD precursors to adsorb and start the nucleation. The presented nucleation study proved to be a straightforward and simple way to evaluate ALD nucleation on polymers.

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

Shifts in the spatial distribution of threading dislocations in 150 mm 4H SiC wafers were examined as a response to intentional changes in both the flow of the nitrogen source gas used to control resistivity during bulk crystal growth, and the growth rate. The density of threading edge and screw dislocations was found to be more evenly distributed in wafers produced under a high-growth rate, low-resistivity process. This result corresponded to a flattening of the resistivity distribution, and a ~34% reduction in on-and off-facet resistivity differential. The effect was attributed to regularized 4H island coalescence due to modulation of step terrace width.