A Study on Cantilever-Type FePd/PZT Stacked-Layer Magnetic Sensor with High Sensitivity

2012 ◽  
Vol 132 (7) ◽  
pp. 183-188 ◽  
Author(s):  
Takashi Saito ◽  
Mio Hamashima ◽  
Chihiro Saito ◽  
Motoichi Nakamura ◽  
Teiko Okazaki ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Magnetic Sensor

The unijunction transistor used as a high sensitivity magnetic sensor

1981 ◽  
Vol 2 ◽  
pp. 149-154 ◽  
Author(s):  
Jean Brini ◽  
Georges Kamarinos
Keyword(s):  
High Sensitivity ◽  
Magnetic Sensor ◽  
Unijunction Transistor

Evaluation of 3D-Printed titanium alloy using eddy current testing with high-sensitivity magnetic sensor

2019 ◽  
Vol 102 ◽  
pp. 90-95 ◽  
Author(s):  
Dongfeng He ◽  
Zhi Wang ◽  
Masahiro Kusano ◽  
Satoshi Kishimoto ◽  
Makoto Watanabe
Keyword(s):  
Titanium Alloy ◽  
Eddy Current ◽  
High Sensitivity ◽  
Eddy Current Testing ◽  
Magnetic Sensor ◽  
Current Testing ◽  
3D Printed

Fiber Bragg Grating and Magnetic Shape Memory Alloy: Novel High-Sensitivity Magnetic Sensor

2007 ◽  
Vol 7 (2) ◽  
pp. 228-229 ◽  
Author(s):  
Carmela Ambrosino ◽  
Patrizio Capoluongo ◽  
Stefania Campopiano ◽  
Antonello Cutolo ◽  
Michele Giordano ◽  
...  
Keyword(s):  
Shape Memory Alloy ◽  
Shape Memory ◽  
Fiber Bragg Grating ◽  
High Sensitivity ◽  
Magnetic Sensor ◽  
Bragg Grating ◽  
Magnetic Shape Memory ◽  
Magnetic Shape Memory Alloy

scholarly journals Factibilidad de integrar split-drain MAGFETs con alta sensibilidad en tecnología CMOS

2019 ◽  
pp. 5-12
Keyword(s):  
Low Cost ◽  
High Sensitivity ◽  
Drain Current ◽  
Cmos Technology ◽  
Magnetic Sensor ◽  
Analytical Models ◽  
Santa Catarina ◽  
Macro Model ◽  
Wide Range ◽  
Galvanomagnetic Effects

Factibilidad de integrar split-drain MAGFETs con alta sensibilidad en tecnología CMOS Feasibility to integrate high-sensitivity split-drain MAGFETs in CMOS technology Gerard Franz Santillán Quiñonez, Víctor H. Champac Vilela y Roberto S. Murphy Arteaga Departamento de Engenharia Elétrica, Universidade Federal de Santa Catarina, Campus UniversitárioTrindade, Florianópolis, Santa Catarina, Brasil, C.P. 88040900, e-mail: [email protected] Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica, Sta. Ma. Tonantzintla, Puebla, México, C.P. 72840. DOI: https://doi.org/10.33017/RevECIPeru2011.0015/ RESUMEN La factibilidad de un Split-Drain MAGFET como sensor magnético ha sido explorada con diversas metodologías, pero sin aprovechar más de un efecto galvanomagnético simultáneamente. Unificando trabajos realizados teórica y experimentalmente, modelos analíticos continuos para la relación entre las fuerzas actuando en la dirección de deflexión y el ángulo de Hall, así como criterios de diseño para incrementar la sensibilidad de un Split-Drain MAGFET son presentados. El análisis propuesto muestra que es posible aprovechar los efectos de deflexión de las líneas de corriente y de magnetorresistencia para incrementar la sensibilidad en un Split-Drain MAGFET. Con un Split-Drain MAGFET con canal considerado como plato de Hall corto, sensibilidades de hasta 59 %/T han sido obtenidas experimentalmente midiendo densidades de flujo magnético desde 90 µT hasta 275 µT. Esto es posible debido a la contribución de los dos efectos galvanomagnéticos considerados. Adicionalmente, un macro modelo SPICE para un Split-Drain MAGFET es propuesto para facilitar su uso en circuitos de mayor complejidad. Con respecto a los resultados experimentales obtenidos, el macro modelo SPICE propuesto tiene un error <1.6 % generando el desbalance entre las corrientes de drenaje. Como un Split-Drain MAGFET es compatible con tecnología CMOS, dominante en circuitos integrados, los resultados obtenidos muestran que es factible usarlo como sensor magnético en sistemas integrados CMOS de alta complejidad, lo cual puede abrir un amplio rango de aplicaciones con bajo costo. Descriptores: MAGFET, split-drain MAGFET, efectos galvanomagnéticos, efecto Hall, magnetorresistencia, sensor magnético. ABSTRACT The feasibility of a Split-Drain MAGFET as magnetic sensor has been explored with several methodologies, but without simultaneously advantaging more than one galvanomagnetic effect. Unifying theorically and experimentally developed works, continuous analytical models for the relationship between forces acting in the deflection direction and for the Hall angle, as well as design criteria to increase the sensitivity of a Split-Drain MAGFET are presented. The proposed analysis shows that it is possible to take advantage of the current-lines deflection and magnetoresistance effects in order to increase the sensitivity of a Split-Drain MAGFET. With a Split-Drain MAGFET with a channel considered as a short Hall plate, sensitivities up to 59%/T have been experimentally obtained measuring magnetic flux densities from 90 µT to 275 µT. This is possible due to the contribution of the two considered galvanomagnetic effects. Additionally, a SPICE macro model for a SplitDrain MAGFET is proposed to facilitate its use in more complex circuits. With respect to the obtained experimental results, the proposed SPICE macro model has an error <1.6 % generating the drain current imbalance. Since a Split-Drain MAGFET is compatible with CMOS technology, dominating in integrated circuits, the obtained results show that it is feasible to use it as magnetic sensor in CMOS integrated systems of high complexity, which opens a wide range of low cost applications. Keywords: MAGFET, split-drain MAGFET, galvanomagnetic effects, Hall effect, magnetoresistance, magnetic sensor.

scholarly journals High-sensitivity magnetic sensor based on the evanescent scattering by a magnetorheological film

2020 ◽  
Vol 45 (24) ◽  
pp. 6643
Author(s):  
Binghui Li ◽  
Hau Ping Chan ◽  
Kazi Tanvir Ahmmed ◽  
Liangjun He ◽  
Shuyan Zhu ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Magnetic Sensor
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