Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system

MRS Advances ◽  
2019 ◽  
Vol 4 (61-62) ◽  
pp. 3347-3352
Author(s):  
T. R. Nanayakkara ◽  
R. L. Samaraweera ◽  
A. Kriisa ◽  
U. Kushan Wijewardena ◽  
S. Withanage ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Microwave Power ◽  
High Mobility ◽  
Electron System ◽  
Zero Field ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Field Limit ◽  
Theoretical Predictions ◽  
Dimensional Electron System

ABSTRACTWe examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induced heating as a function of the microwave power. The study shows that microwaves produce a small discernable increase in the electron temperature both at null magnetic field and at finite magnetic fields in the GaAs/AlGaAs 2DES. The heating effect at null field appears greater in comparison to the examined finite field interval, although the increase in the electron temperature in the zero-field limit appears smaller than theoretical predictions.

Microwave Reflection From The Microwave Photo-Excited High Mobility GaAs/AlGaAs Two-Dimensional Electron System

2013 ◽  
Vol 1617 ◽  
pp. 19-24
Author(s):  
Tianyu Ye ◽  
R. G. Mani ◽  
W. Wegscheider
Keyword(s):  
Microwave Power ◽  
High Mobility ◽  
Microwave Frequency ◽  
Electron System ◽  
Two Dimensional ◽  
Strong Correlations ◽  
Dimensional Electron ◽  
Dimensional Electron System ◽  
Microwave Reflection ◽  
Magnetoresistance Oscillations

ABSTRACTWe examine the microwave reflection from the high mobility GaAs/AlGaAs two-dimensional electron system (2DES). Strong correlations have been observed between the microwave induced magnetoresistance oscillations and the microwave reflection oscillations in a concurrent measurement of the microwave illuminated magnetoresistance and the microwave reflection from the 2DES. The correlations were followed as a function of the microwave frequency and the microwave power dependent. Different existing theories are considered to explain the results.

scholarly journals OSCILLATORY AND VANISHING RESISTANCE STATES IN MICROWAVE IRRADIATED 2D ELECTRON SYSTEMS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3465-3472 ◽  
Author(s):  
R. R. DU ◽  
M. A. ZUDOV ◽  
C. L. YANG ◽  
Z. Q. YUAN ◽  
L. N. PFEIFFER ◽  
...  
Keyword(s):  
High Frequency ◽  
High Mobility ◽  
Electron System ◽  
Two Dimensional ◽  
Electron Systems ◽  
Dimensional Electron ◽  
Dimensional Electron System ◽  
Zero Resistance ◽  
The Subject ◽  
Shubnikov De Haas Oscillations

Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated with multi-photon processes; suppression of Shubnikov-de Haas oscillations by high-frequency microwaves; and microwave photoconductivity of a high-mobility two-dimensional hole system.

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