Copper vanadates as candidate materials for phase change optical memory

1992 ◽  
Vol 7 (3) ◽  
pp. 741-744 ◽  
Author(s):  
D.P. Birnie ◽  
J.D. Weinberg ◽  
D.G. Swanson
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Data Storage ◽  
Optical Memory ◽  
Optical Data Storage ◽  
Optical Data ◽  
Storage Devices ◽  
Phase Development ◽  
Successful Phase ◽  
Oxide Melts

Several copper vanadium oxide melts were tested for possible application as the active medium in phase-change optical data storage devices. These materials were melted in the bulk and then quenched. Their phase development was characterized to help determine their applicability to optical data storage. It was found that they satisfy many of the criteria necessary for successful phase-change data storage; further studies of their behavior in thin film geometry would be warranted.

The Patterned Optical Phase Change Recording Media

2005 ◽  
Author(s):  
Evan Small ◽  
Sadegh M. Sadeghipour ◽  
Mehdi Asheghi
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Numerical Aperture ◽  
Data Access ◽  
Optical Microscope ◽  
Optical Data Storage ◽  
High Density ◽  
Optical Data ◽  
Optical Phase ◽  
Storage Devices

Demands for the high storage capacities and rates of data transfer have been overwhelming in the recent years. With the increasing use of multimedia, the rewritable optical phase-change disks, e.g. CD and DVD, have become more popular. The optical PC data storage devices provide relatively short data access rates (∼ 10 MHz) and moderate areal densities. As in other areas of data storage, there has been tremendous demand and pressure, driven by consumer application, for inexpensive high-density PC systems. So far, the optical data storage industry has managed to meet the demands by using lasers with shorter wavelengths and objective lenses with higher numerical aperture (NA). Several strategies such as “multilevel storage layers” [1] and “mark radial width modulation” [2] have been proposed for the next generation of the high-density PC data storage devices. There have been advances in near field optical techniques to increase density (40 Gb/in) using solid immersion lens [3]. Hosaka et al. [4] demonstrated 60 nm domains in phase change media that translates to 170 Gb/in2 using a scanning near-filed optical microscope. Kado and Tohda [5] used an atomic force microscope (AFM) to locally modify the electrical property (×100) of a PC material by applying an electrical pulse between the probe and media. They achieved an areal density near 1 Tbits/cm2.

Thin-film coatings for flexible optical data storage

1990 ◽  
Author(s):  
Andrew J. Strandjord ◽  
Steven P. Webb ◽  
Donald R. Beaman ◽  
Susan L. Carroll
Keyword(s):  
Thin Film ◽  
Data Storage ◽  
Optical Data Storage ◽  
Optical Data ◽  
Film Coatings ◽  
Thin Film Coatings

A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Tae-Yon Lee ◽  
Byung-ki Cheong ◽  
Taek Sung Lee ◽  
Sung Jin Park ◽  
Won Mok Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
High Speed ◽  
Preliminary Test ◽  
Optical Data Storage ◽  
Optical Recording ◽  
Optical Data ◽  
Recording Layer ◽  
Novel Approach ◽  
Vegard’S Law

ABSTRACTA new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4alloy was mixed with Sn1Bi2Te4alloy so as to form pseudo-binary alloys (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x (x is a mole fraction). From structural and optical analyses of the co- sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegard's law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4recording layer. The (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.

Spatial control of organic nanocrystal nucleation in sol–gel thin films for 3-D optical data storage devices or chemical multi-sensors

2005 ◽  
Vol 283 (3-4) ◽  
pp. 444-449 ◽  
Author(s):  
Estelle Botzung-Appert ◽  
Julien Zaccaro ◽  
Cécile Gourgon ◽  
Yves Usson ◽  
Patrice L. Baldeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Sol Gel ◽  
Optical Data Storage ◽  
Optical Data ◽  
Spatial Control ◽  
Storage Devices

scholarly journals Studies on Structural, Morphological, Local Electrical, Optical and Magnetic Properties of Iron Site Manganese Substituted Yttrium Orthoferrite

2020 ◽  
Author(s):  
Turghunjan Gholam ◽  
Liu Peng ◽  
Dong Yu-Hui ◽  
Wang Hui-Qiong
Keyword(s):  
Magnetic Properties ◽  
Data Storage ◽  
Local Structure ◽  
Nearest Neighbor ◽  
Optical Data Storage ◽  
Optical Data ◽  
Magnetic Field Sensors ◽  
Storage Devices ◽  
Yttrium Orthoferrite ◽  
Optical And Magnetic Properties

Abstract Yttrium orthoferrite (YFeO3) is of considerable interest for its potential application in magnetic field sensors and magneto optical data storage devices. Doping is one of the effective approaches to tune the compound properties. And it is important to determine the doping sites of the dopants to better understanding the related mechanism. In this work, Manganese (Mn) doped YFeO3, i.e., YFMxO powders with 0 ≤ x ≤ 0.1 were synthesized by hydrothermal method to study the influences of doping on their structural, morphological, local electrical, optical and magnetic properties. The experimental results show that Mn dopants occupy Iron (Fe) sites and that all these samples exhibit an orthorhombic structure with space group Pnma. Refined structure parameters are presented. Morphology images show the shape evolution from layered to multilayered with increasing Mn content. The Fe and Y K-edge local structure studies indicate that the valency of Fe and Y is mainly found in trivalent state, which also indicate that substitution of Mn ions not only affects the nearest neighbor atomic shell of Fe but also affects the nearest neighbor’s local structure of Y atoms. IR spectra reveal the characteristic vibrations of the obtained YFMxO samples. From the magnetic study, it is observed that the substitution of Y ions by Mn ions changes the magnetic property of YFeO3 from ferromagnetic to paramagnetic. Our results show that the addition of Mn exhibits an evident influent on the local structural and magnetic properties.

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