Local and Electronic Structure of Siloxene

Silicon L2,3 x-ray emission spectra (XES) of siloxene powder samples prepared according to Wöohler and Kautsky (Wöhler and Kautsky siloxene) are presented. The results are compared with the Si L2,3 spectra of the reference compounds a-Si, c-Si, SiO2, and SiOx. A close similarity of the electronic structure of Wöhler siloxene to that of a-SiO0.43: H and of Kautsky siloxene to that of a-SiO0.87: H is found. We determine the number of oxygen atoms per Si atom at ~0.5 in Wöhler siloxene and ~0.8 in Kautsky siloxene. The relative concentrations are in good agreement with the results of infrared absorption measurements on the same samples.

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X-RAY EMISSION AND ABSORPTION SPECTRA AND ELECTRONIC STRUCTURE OF MgB2

Surface Review and Letters ◽

10.1142/s0218625x02003408 ◽

2002 ◽

Vol 09 (02) ◽

pp. 1097-1102

Author(s):

E. Z. KURMAEV ◽

I. I. LYAKHOVSKAYA ◽

J. KORTUS ◽

M. DEMETER ◽

M. NEUMANN ◽

...

Keyword(s):

Electronic Structure ◽

Charge Transfer ◽

Binding Energy ◽

Emission Spectra ◽

Energy Scale ◽

Matrix Elements ◽

X Ray ◽

Emission And Absorption Spectra ◽

Binding Energy Scale ◽

Good Agreement

Measurements of X-ray emission and absorption of the constituents of MgB 2 are presented. The results obtained are in good agreement with calculated X-ray spectra, with dipole matrix elements taken into account. The comparison of X-ray emission spectra of graphite, AlB 2, and MgB 2 in the binding energy scale supports the idea of charge transfer from σ to π bands, which creates holes at the top of the bonding σ bands and drives the high-Tc superconductivity in MgB 2.

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Electronic structure and L X-ray emission spectra of molybdenum carbide, boride, nitride, silicide and silicocarbide

X-Ray Spectrometry ◽

10.1002/xrs.1300230509 ◽

1994 ◽

Vol 23 (5) ◽

pp. 236-241 ◽

Cited By ~ 6

Author(s):

B. S. Acharya ◽

R. Sakthivel

Keyword(s):

Electronic Structure ◽

Molybdenum Carbide ◽

Emission Spectra ◽

X Ray

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X-ray emission spectra of the components and the electronic structure of the orthovanadates of the elements of group III

Journal of Structural Chemistry ◽

10.1007/bf00746846 ◽

1980 ◽

Vol 21 (3) ◽

pp. 286-290 ◽

Cited By ~ 1

Author(s):

N. I. Lazukova ◽

V. A. Gubanov ◽

M. P. Butsman ◽

V. M. Cherkashenko ◽

�. Z. Kurmaev ◽

...

Keyword(s):

Electronic Structure ◽

Emission Spectra ◽

X Ray ◽

Group Iii

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Electronic structure, photoemission, inverse photoemission, and x-ray emission spectra of superconductingBa1−xKxBiO3

Physical Review B ◽

10.1103/physrevb.40.4442 ◽

1989 ◽

Vol 40 (7) ◽

pp. 4442-4452 ◽

Cited By ~ 64

Author(s):

Noriaki Hamada ◽

Sandro Massidda ◽

Arthur J. Freeman ◽

Joseph Redinger

Keyword(s):

Electronic Structure ◽

Emission Spectra ◽

X Ray ◽

Inverse Photoemission

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Bulk and Surface Electronic Structure of GaN Measured Using Angle-Resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption

MRS Proceedings ◽

10.1557/proc-449-787 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 5

Author(s):

Kevin E. Smith ◽

Sarnjeet S Dhesi ◽

Laurent-C. Duda ◽

Cristian B Stagarescu ◽

J. H. Guo ◽

...

Keyword(s):

Electronic Structure ◽

Valence Band ◽

Absorption Spectra ◽

Conduction Band ◽

Brillouin Zone ◽

Emission Spectra ◽

Partial Density ◽

High Symmetry ◽

X Ray ◽

X Ray Absorption

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.

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