Shear deformation in TiAl: Atomic dynamic and static simulations

2007 ◽  
Vol 22 (6) ◽  
pp. 1685-1693 ◽  
Author(s):  
Y.L. Liu ◽  
S.Q. Wang ◽  
H.Q. Ye

The dynamic shear deformation process and the related stacking fault transitions in TiAl have been systematically investigated using both the molecular dynamics and ab initio methods. The details of the dislocation initiation and microstructural evolution are presented, and the concomitant potential energy variation and the radial distribution functions have been analyzed. The results show, interestingly, that some deformation-induced hexagonal close-packed (hcp) structures are metastable, and that a higher velocity field promotes more hcp segments. The phenomena are interpreted based on ab initio calculations of the detailed energy variation at the different fault transition stages, i.e., superlattice intrinsic stacking fault (SISF) → TWIN, SISF → hcp, and hcp → TWIN. The intrinsic factor that governs the deformation process is discussed. The results promote new understanding of the stress-induced interfaces and dislocation behaviors in experimental observations.

2012 ◽  
Vol 717-720 ◽  
pp. 415-418
Author(s):  
Yoshitaka Umeno ◽  
Kuniaki Yagi ◽  
Hiroyuki Nagasawa

We carry out ab initio density functional theory calculations to investigate the fundamental mechanical properties of stacking faults in 3C-SiC, including the effect of stress and doping atoms (substitution of C by N or Si). Stress induced by stacking fault (SF) formation is quantitatively evaluated. Extrinsic SFs containing double and triple SiC layers are found to be slightly more stable than the single-layer extrinsic SF, supporting experimental observation. Effect of tensile or compressive stress on SF energies is found to be marginal. Neglecting the effect of local strain induced by doping, N doping around an SF obviously increase the SF formation energy, while SFs seem to be easily formed in Si-rich SiC.


2008 ◽  
Vol 1145 ◽  
Author(s):  
Cristina Romero ◽  
Ariel A. Valladares ◽  
R. M. Valladares ◽  
Alexander Valladares ◽  
Alipio G. Calles

AbstractNanoporous carbon is a widely studied material due to its potential applications in hydrogen storage or for filtering undesirable products. Most of the developments have been experimental although some simulation work has been carried out based on the use of graphene sheets and/or carbon chains and classical molecular dynamics. Here we present an application of our recently developed ab initio method [1] for the generation of group IV porous materials. The method consists in constructing a crystalline diamond supercell with 216 atoms of carbon and a density of 3.546 g/cm3, then lengthening the supercell edge to obtain a density of 1.38 g/cm3, yielding a porosity of 61.1 % in order to be able to compare with experimental results reported in the literature [2]. We then subject the resulting supercell to an ab initio molecular dynamics process at 1000 K during 295 steps. The radial distribution functions obtained are compared to experiment to discern coincidences and discrepancies.


2003 ◽  
Vol 433-436 ◽  
pp. 921-924 ◽  
Author(s):  
Hisaomi Iwata ◽  
Ulf Lindefelt ◽  
Sven Öberg ◽  
Patrick R. Briddon

2005 ◽  
Vol 2005 (0) ◽  
pp. 503-504
Author(s):  
Yusuke KINOSHITA ◽  
Yoshitaka UMENO ◽  
Takayuki KITAMURA

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