scholarly journals High-resolution transmission electron microscopy observations of La2Zr2O7 thin layers on LaAlO3 obtained by chemical methods

2009 ◽  
Vol 24 (4) ◽  
pp. 1480-1491 ◽  
Author(s):  
L. Rapenne ◽  
C. Jiménez ◽  
T. Caroff ◽  
C. Million ◽  
S. Morlens ◽  
...  

La2Zr2O7 (LZO) films have been grown by metalorganic decomposition (MOD) to be used as buffer layers for coated conductors. LZO can crystallize into two similar structures: fluorite or pyrochlore. Coated conductor application focuses on pyrochlore structure because it is a good barrier against oxygen diffusion. Classical x-ray diffraction is not able to separate the contribution of these two structures. Transmission electron microscopy and high-resolution transmission electron microscopy were used to determine the local distribution of these two phases in epitaxial LZO layers grown on LaAlO3. A characteristic feature of LZO thin films deposited by MOD is the formation of nanovoids in an almost single-crystal structure of LZO pyrochlore phase. For comparison, LZO layers deposited by metalorganic chemical vapor deposition were also studied. In this last case, the film is compact without voids and the structure corresponds to pyrochlore phase. Thus, the formation of nanovoids is a characteristic feature of MOD grown films.

Author(s):  
Raghaw Rai ◽  
James Conner ◽  
Sharon Murphy ◽  
Swaminathan Subramanian

Abstract The aggressive scaling of metal oxide semiconductor field effect transistor (MOSFET) device features, including gate dielectrics, silicides, and strained Si channels, presents unique metrology and characterization challenges to control electrical properties such as reliability and leakage current. This paper describes challenges faced in measuring the thickness of thin gate oxides and interfacial layers found in high-K gate dielectrics, determining Ni silicide phase in devices, and characterizing strain in MOSFETs with SiGe stressors. From case studies, it has been observed that thin layers (gate oxide, high-K film thickness, and interfacial layer) can be measured using high-resolution transmission electron microscopy (HRTEM) with good accuracy but there are some challenges in the form of sample thickness, damage-free samples, and precise sectioning of the sample for site-specific specimens. Complementary information based on HRTEM, annular dark field, and image simulation should be used to check the accuracy of thin gate dielectric measurements.


Author(s):  
R. Gronsky

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.


Carbon ◽  
2017 ◽  
Vol 117 ◽  
pp. 174-181 ◽  
Author(s):  
Chang’an Wang ◽  
Thomas Huddle ◽  
Chung-Hsuan Huang ◽  
Wenbo Zhu ◽  
Randy L. Vander Wal ◽  
...  

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