The research of CdZnTe (111)B surface with synchrotron radiation photoemission spectroscopy

2009 ◽  
Vol 24 (5) ◽  
pp. 1639-1641 ◽  
Author(s):  
Gangqiang Zha ◽  
Wanqi Jie ◽  
Tingting Tan ◽  
XuXu Bai ◽  
Li Fu ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Work Function ◽  
Photoemission Spectroscopy ◽  
Low Energy Electron Diffraction ◽  
Local Reconstruction ◽  
Atomic Structures ◽  
Low Energy Electron ◽  
Synchrotron Radiation Photoemission ◽  
The Ideal

The clean and ordered surfaces of CdZnTe (111)B grown by the Bridgman method were obtained by Ar ion bombardment and thermal annealing in situ in an ultrahigh vacuum. The surface atomic structures of CdZnTe (111)B after annealing at different temperature were observed by low-energy electron diffraction (LEED). The valence band and work function of CdZnTe (111)B surfaces were determined by synchrotron radiation photoemission spectroscopy. The order of CdZnTe (111)B after annealing at 350 °C will worsen, and the (111)B-(2 × 2) local reconstruction will be formed. The work function of CdZnTe (111)B after annealing at 350 °C is 0.8 eV higher than that of CdZnTe (111)B-(1 × 1), and the local reconstruction may be induced by Te adatoms on top of the ideal truncation.

STRUCTURE AND THERMAL STABILITY OF THE SULFIDE OVERLAYERS ON CH3CSNH2-PASSIVATED GaAs(100) SURFACES

2001 ◽  
Vol 08 (01n02) ◽  
pp. 19-23 ◽  
Author(s):  
F. Q. XU ◽  
E. D. LU ◽  
H. B. PAN ◽  
C. K. XIE ◽  
P. S. XU ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electron Spectroscopy ◽  
Photoemission Spectroscopy ◽  
Low Energy Electron Diffraction ◽  
Native Oxides ◽  
Sulfur Passivation ◽  
Different Temperatures ◽  
Low Energy Electron ◽  
Synchrotron Radiation Photoemission ◽  
Thermal Stability Of

Chemically sulfur passivation of GaAs(100) by thioacetamide ( CH 3 CSNH 2) has been studied using synchrotron radiation photoemission spectroscopy (SRPES), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The measurement of SRPES and AES showed that the top layer of native oxides over GaAs(100) was removed and the sulfides of Ga and As were formed after the passivation process. The thermal stability and surface structure have also been studied by annealing the passivated samples at different temperatures. We found that the surface sulfides could be removed gradually; as a result, a clean, ordered and thus Fermi level unpinning surface was finally achieved. The surface restructures with GaAs(100)–S(2×1) and 4×1 LEED patterns were observed on annealing above 260°C and at 550°C respectively.

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