scholarly journals Study of phase separation in an InGaN alloy by electron energy loss spectroscopy in an aberration corrected monochromated scanning transmission electron microscope

2016 ◽  
Vol 32 (5) ◽  
pp. 983-995 ◽  
Author(s):  
Thomas Walther ◽  
Xiaoyi Wang ◽  
Veerendra C. Angadi ◽  
Pierre Ruterana ◽  
Paolo Longo ◽  
...  

Abstract

2008 ◽  
Vol 14 (S2) ◽  
pp. 1400-1401 ◽  
Author(s):  
M Watanabe ◽  
M Kanno ◽  
D Ackland ◽  
CJ Kiely ◽  
DB Williams

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


2000 ◽  
Vol 07 (04) ◽  
pp. 475-494 ◽  
Author(s):  
O. STÉPHAN ◽  
A. GLOTER ◽  
D. IMHOFF ◽  
M. KOCIAK ◽  
C. MORY ◽  
...  

The basics of electron energy loss spectroscopy (EELS) performed in the context of a scanning transmission electron microscope are described. This includes instrumentation, information contained in an EELS spectrum, data acquisition and processing, and some illustrations by a few examples.


2002 ◽  
Vol 747 ◽  
Author(s):  
A. Roy Chowdhuri ◽  
C. G. Takoudis ◽  
R. F. Klie ◽  
N. D. Browning

ABSTRACTThin films of aluminum oxide were deposited on clean Si(100) substrates using trimethylaluminum and oxygen at 300°C. Infrared spectroscopic and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate or SiO2 phase formation at the film/substrate interface. The O/Al ratio in the as deposited film was found to be higher than that in stoichiometric Al2O3. On annealing the as deposited samples in Ar at higher temperatures, a peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the infrared spectra. A combination of Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Z-contrast images and electron energy loss spectra, obtained while heating the sample inside the scanning transmission electron microscope were used to follow the interfacial SiO2 formation.


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