Coupling of Defect Fields to Domains and Phase Transition Characteristics of Ferroelectric Thin Films with Charged Defects

2011 ◽  
Vol 1292 ◽  
Author(s):  
Ibrahim B. Misirlioglu ◽  
Hale N. Cologlu ◽  
Mehmet Yildiz

ABSTRACTWe analyze the effect of charged defects on the electrical domains, phase transition characteristics and electrical properties of ferroelectric thin films with thin dead layers using a non-linear thermodynamic model. Depending on their density and field strength, defects can pin and couple to electrical domains in the film. For ultrathin films, depolarizing effects dominate and the transition from the paraelectric state is into the multidomain ferroelectric state during cooling and is strongly smeared. The competition between defect induced extrinsic effects and the dead layer related limit is demonstrated.

2005 ◽  
Vol 881 ◽  
Author(s):  
Bo-Kuai Lai ◽  
Igor Kornev ◽  
Laurent Bellaiche ◽  
Greg Salamo

AbstractProperties and phase transition behaviors of ferroelectric thin films that are different from that of their bulk form is usually referred to as size effect. A first-principles-based scheme is used to investigate the effects of four important factors contributing to the size effects in epitaxial (001) BaTiO3 ultrathin films: misfit strain, existence of surface, film thickness, and electrical boundary conditions.


1999 ◽  
Vol 229 (1) ◽  
pp. 21-26
Author(s):  
C. L. Wang ◽  
L. Zhang ◽  
W. L. Zhong ◽  
P. L. Zhang

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.


2000 ◽  
Vol 375 (1-2) ◽  
pp. 15-18 ◽  
Author(s):  
Xiaomei Lu ◽  
Jinsong Zhu ◽  
Zhiguo Liu ◽  
Xiaoshan Xu ◽  
Yening Wang

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