Photomodulated Rayleigh Scattering from Single Semiconductor Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
Mohammad Montazeri ◽  
Aaron Wade ◽  
Melodie Fickenscher ◽  
Howard E. Jackson ◽  
Leigh M. Smith ◽  
...  
Keyword(s):  
Rayleigh Scattering ◽  
Electronic Band Structure ◽  
Semiconductor Nanowires ◽  
Electronic Band ◽  
Nanowire Diameter ◽  
Transition Energies ◽  
Single Nanowires ◽  
Destructive Measurement ◽  
Non Destructive ◽  
Electronic Transition Energies

ABSTRACTWe demonstrate the newly developed technique Photomodulated Rayleigh Scattering spectroscopy in order to probe the electronic band structure of single semiconductor nanowires. We show that both the electronic transition energies and nanowire diameter can be measured simultaneously and with high accuracy in a single non-destructive measurement. We demonstrate our results for zincblende GaAs as well as wurtzite InP nanowires where we probed the band gaps and transition energies at both room and low temperatures. This technique should advance the study of optical properties of single nanowires as well as other types of nanostructures.

Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4329-4336 ◽  
Author(s):  
Mohammad Montazeri ◽  
Aaron Wade ◽  
Melodie Fickenscher ◽  
Howard E. Jackson ◽  
Leigh M. Smith ◽  
...  
Keyword(s):  
Band Structure ◽  
Rayleigh Scattering ◽  
Electronic Band Structure ◽  
Semiconductor Nanowires ◽  
Electronic Band

Prospects for Bismuth Nanowires as Thermoelectrics

1998 ◽  
Vol 545 ◽  
Author(s):  
M. S. Dresselhausa ◽  
Z. Zhang ◽  
X. Sun ◽  
J. Y. Ying ◽  
J. Heremans ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Electronic Band Structure ◽  
Electron Gas ◽  
Electronic Band ◽  
Nanowire Diameter ◽  
Crystalline Orientation ◽  
One Dimensional ◽  
Quantum Confinement Effects ◽  
High Anisotropy ◽  
Bismuth Nanowires

AbstractThe small effective mass of Bi, high anisotropy of its Fermi surface, and the high aspect ratio (length/diameter) of Bi nanowires make this an excellent system for studying quantum confinement effects of a one-dimensional (ID) electron gas in relation to electrical conductivity, thermoelectric power, and thermal conductivity. A theoretical model based on the basic electronic band structure of bulk Bi is suitably modified to describe 1D bismuth nanowires and is used to predict the dependence of these transport properties on nanowire diameter, temperature and crystalline orientation of the bismuth nanowires. Experiments have been carried out on ultra-fine single crystal Bi nanowires (10–120 nm diameter) with a packing density as high as 7 × 1010 wires/cm2 to test the quantum confinement assumptions of the model and the occurrence of a quantum confinement-induced semimetal-to-semiconductor transition as the wire diameter becomes less than 100 nm. Prospects for the use of bismuth nanowires for thermoelectric applications are discussed.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

THE ELECTRONIC BAND STRUCTURE OF V3Ga AND V3Si

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Ab initio calculation on the Optical Properties of AA- Stacked two dimensional Graphene, Silicene, Germanene, and Stanene

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Complex Refractive Index ◽  
Single Layer ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Wide Range ◽  
Optical Region

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

2021 ◽  
Vol 67 (1 Jan-Feb) ◽  
pp. 7
Author(s):  
B. Bachir Bouiadjra ◽  
N. Mehnane ◽  
N. Oukli
Keyword(s):  
Optical Properties ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Scale Up ◽  
Energy Scale ◽  
First Principles Calculation ◽  
Full Potential ◽  
Electronic Band ◽  
Electronic And Optical Properties ◽  
Growth Axis

Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN)n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN)n SLs in the both  growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN)n such as light-emitting applications, this theoretical study can help the experimental measurements.

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