Silicon Nanowires: A Breakthrough for Thermoelectric Applications

The potentialities of silicon as a starting material for electronic devices are well known and largely exploited, driving the worldwide spreading of integrated circuits. When nanostructured, silicon is also an excellent material for thermoelectric applications, and hence it could give a significant contribution in the fundamental fields of energy micro-harvesting (scavenging) and macro-harvesting. On the basis of recently published experimental works, we show that the power factor of silicon is very high in a large temperature range (from room temperature up to 900 K). Combining the high power factor with the reduced thermal conductivity of monocrystalline silicon nanowires and nanostructures, we show that the foreseen figure of merit ZT could be very high, reaching values well above 1 at temperatures around 900 K. We report the best parameters to optimize the thermoelectric properties of silicon nanostructures, in terms of doping concentration and nanowire diameter. At the end, we report some technological processes and solutions for the fabrication of macroscopic thermoelectric devices, based on large numbers of silicon nanowire/nanostructures, showing some fabricated demonstrators.

Strong coupling of a plasmonic nanoparticle to a semiconductor nanowire

By placing a single Au nanoparticle on the surface of a cadmium sulfide (CdS) nanowire, we demonstrate strong coupling of localized surface plasmon resonance (LSPR) modes in the nanoparticle and whispering gallery modes (WGMs) in the nanowire. For a 50-nm-diameter Au-nanosphere particle, strong coupling occurs when the nanowire diameter is between 300 and 600 nm, with a mode splitting up to 80 meV. Using a temperature-induced spectral shift of the resonance wavelength, we also observe the anticrossing behavior in the strongly coupled system. In addition, since the Au nanosphere has spherical symmetry, the supported LSPR mode can be selectively coupled with transverse electric (TE) and transverse magnetic (TM) WGMs in the nanowire. The ultracompact strong-coupling system shown here may provide a versatile platform for studying hybrid “photon–plasmon” nanolasers, nonlinear optical devices, and nanosensors.

Decoupling electron and phonon transport in single-nanowire hybrid materials for high-performance thermoelectrics

Organic-inorganic hybrids have recently emerged as a class of high-performing thermoelectric materials that are lightweight and mechanically flexible. However, the fundamental electrical and thermal transport in these materials has remained elusive due to the heterogeneity of bulk, polycrystalline, thin films reported thus far. Here, we systematically investigate a model hybrid comprising a single core/shell nanowire of Te-PEDOT:PSS. We show that as the nanowire diameter is reduced, the electrical conductivity increases and the thermal conductivity decreases, while the Seebeck coefficient remains nearly constant—this collectively results in a figure of merit, ZT, of 0.54 at 400 K. The origin of the decoupling of charge and heat transport lies in the fact that electrical transport occurs through the organic shell, while thermal transport is driven by the inorganic core. This study establishes design principles for high-performing thermoelectrics that leverage the unique interactions occurring at the interfaces of hybrid nanowires.

Investigation of Variation in Device Design Parameters on the Saturation Voltages of Hetero-junction Nanowire Tunnel FETs

Estimation of the saturation voltages of beyond CMOS devices is essential for the accurate circuit design and analysis. In this work, we look at the influence of device design parameters on the saturation voltage (VDSAT) of a Tunnel Field Effect Transistor (TFET) using 3D TCAD Numerical Simulations. The variation in channel length, underlap at gate-drain, source/drain doping, and the source/channel material are some of the vital optimization parameters in the design and optimization of TFET based circuits. We observe, with the increasing value of drain bias (VDS), TFET device initially enters in the soft saturation state and subsequently a deep saturation state is attained. These voltages are altered with device variability and hence the analog performance. An increase in drain (source) doping increases (decreases) the soft saturation voltage of TFETs. It is also found that an early onset of saturation can be achieved by the gate-drain underlap in TFETs. The impact of short channel lengths is to worsen the perfect saturation phenomenon in Tunnel FETs. In addition, the reduction in nanowire diameter delays the saturation by few milivolts.

Enhanced laser-driven proton acceleration using nanowire targets

Laser-driven proton acceleration is a growing field of interest in the high-power laser community. One of the big challenges related to the most routinely used laser-driven ion acceleration mechanism, Target-Normal Sheath Acceleration (TNSA), is to enhance the laser-to-proton energy transfer such as to maximize the proton kinetic energy and number. A way to achieve this is using nanostructured target surfaces in the laser-matter interaction. In this paper, we show that nanowire structures can increase the maximum proton energy by a factor of two, triple the proton temperature and boost the proton numbers, in a campaign performed on the ultra-high contrast 10 TW laser at the Lund Laser Center (LLC). The optimal nanowire length, generating maximum proton energies around 6 MeV, is around 1–2 $$\upmu$$ μ m. This nanowire length is sufficient to form well-defined highly-absorptive NW forests and short enough to minimize the energy loss of hot electrons going through the target bulk. Results are further supported by Particle-In-Cell simulations. Systematically analyzing nanowire length, diameter and gap size, we examine the underlying physical mechanisms that are provoking the enhancement of the longitudinal accelerating electric field. The parameter scan analysis shows that optimizing the spatial gap between the nanowires leads to larger enhancement than by the nanowire diameter and length, through increased electron heating.

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains.

Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature

Ratcheting effects play an important role in systems ranging from mechanical socket wrenches to biological motor proteins. The underlying principle is to convert a fluctuating, unbiased force into unidirectional motion. Here, we report the ratcheting of electrons at room temperature using a semiconductor nanowire with precisely engineered asymmetry. Modulation of the nanowire diameter creates a cylindrical sawtooth geometry with broken inversion symmetry on a nanometer-length scale. In a two-terminal device, this structure responded as a three-dimensional geometric diode that funnels electrons preferentially in one direction through specular reflection of quasi-ballistic electrons at the nanowire surface. The ratcheting effect causes charge rectification at frequencies exceeding 40 gigahertz, demonstrating the potential for applications such as high-speed data processing and long-wavelength energy harvesting.

Miniaturized GaAs Nanowire Laser with a Metal Grating Reflector

This work proposed a miniaturized nanowire laser with high end-facet reflection. The high end-facet reflection was realized by integrating an Ag grating between the nanowire and the substrate. Its propagation and reflection properties were calculated using the finite elements method. The simulation results show that the reflectivity can be as high as 77.6% for a nanowire diameter of 200 nm and a period of 20, which is nearly three times larger than that of the nanowire without a metal grating reflector. For an equal length of nanowire with/without the metal grating reflector, the corresponding threshold gain is approximately a quarter of that of the nanowire without the metal grating reflector. Owing to the high reflection, the length of the nanowire can be reduced to 0.9 μm for the period of 5, resulting in a genuine nanolaser, composed of nanowire, with three dimensions smaller than 1 μm (the diameter is 200 nm). The proposed nanowire laser with a lowered threshold and reduced dimensions would be of great significance in on-chip information systems and networks.

Silver nanoprisms/graphene oxide/silicon nanowires composites for R6G surface-enhanced Raman spectroscopy sensor

In this study, Silver nanoprisms/Graphene Oxide/Silicon nanowires (AgNPr/GO/SiNWs) nanocomposites have been fabricated for Surface-Enhanced Raman Spectroscopy (SERS) of Rhodamine 6G (R6G). The SiNWs have been synthesized using the metal-assisted chemical etching method. The surface morphologies of the SiNWs samples have been investigated using scanning electron microscopy. By varying the etching time from 5 to 30 min, the nanowire lengths have been tuned from 2 to 10 µm. While the average nanowire diameter remained unaffected (30-60 nm) with the increase in etching time, increments of nanowires length were found to alter the bundle morphology. The final SERS structure is obtained by depositing the GO layer followed by AgNPr. The obtained SERS sensor exhibited an enhanced efficiency as compared to AgNPr/SiNW matrix. The results demonstrate that a maximum efficiency factor of 6.1×1010 could be achieved with sensor fabricated with 30 min etched SiNWs.