Plasmonic Circular Dichroism in Chiral Gold Nanowire Dimers

We report a computational study at the time-dependent density functional theory (TDDFT) level of the chiro-optical spectra of chiral gold nanowires coupled in dimers. Our goal is to explore whether it is possible to overcome destructive interference in single nanowires that damp chiral response in these systems and to achieve intense plasmonic circular dichroism (CD) through a coupling between the nanostructures. We predict a huge enhancement of circular dichroism at the plasmon resonance when two chiral nanowires are intimately coupled in an achiral relative arrangement. Such an effect is even more pronounced when two chiral nanowires are coupled in a chiral relative arrangement. Individual component maps of rotator strength, partial contributions according to the magnetic dipole component, and induced densities allow us to fully rationalize these findings, thus opening the way to the field of plasmonic CD and its rational design.

Separation of III-N partially-coalesced nanowire arrays from Si substrate

In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

Comparison of 2D versus 3D diffusion analysis at Nanowire Electrodes: Finite element analysis and experimental study

In electroanalysis, finite element simulations of electrochemical processes occurring at electrodes are used to provide key insight into experimental design in relation to diffusion profiles and expected currents. The diffusion domain approach (DDA) offers a means of reducing a three dimensional design to two dimensions to ease computational demands. However, the DDA approach can be limited when basic assumptions, for example that all electrodes in an array are equivalent, are incorrect. Consequently, to get a more realistic view of molecular diffusion to nanoelectrodes, it is necessary to undertake simulations in 3D. In this work, two and three dimensional models of electrodes comprising of (i) single nanowires, (ii) arrays of nanowires and (iii) interdigitated arrays of nanowires operating in generator-collector mode, are undertaken and compared to experimental results obtained from fabricated devices. The 3D simulations predict a higher extracted current for a single nanowires and diffusionally independent nanowire arrays when compared to 2D simulations since, unlike the 2D model, they take into account molecular diffusion to and from the nanowire termini. This current difference was observed to increase with increasing electrode width and decrease with electrode length. When the nanowire arrays were diffusionally overlapped, they behaved as an electrode of larger width, and the divergence between the two models increased. By contrast, in generator-collector mode, using interdigitated nanowire arrays, the difference between extracted current values obtained using two models was significantly lower. Simulations indicated however that a higher collection efficiency was predicted by the 2D model when compared to the 3D model. Electrochemical experiments were undertaken to confirm the simulation study and demonstrated that the extracted currents from 3D simulations more closely mapped onto experimentally measured currents.

Fabrication, Characterization and Performance of Low Power Gas Sensors Based on (GaxIn1-x)2O3 Nanowires

Active research in nanostructured materials aims to explore new paths for improving electronic device characteristics. In the field of gas sensors, those based on metal oxide single nanowires exhibit excellent sensitivity and can operate at extremely low power consumption, making them a highly promising candidate for a novel generation of portable devices. The mix of two different metal oxides on the same nanowire can further broaden the response of this kind of gas sensor, thus widening the range of detectable gases, without compromising the properties related to the active region miniaturization. In this paper, a first study on the synthesis, characterization and gas sensing performance of (GaxIn1-x)2O3 nanowires (NWs) is reported. Carbothermal metal-assisted chemical vapor deposition was carried out with different mixtures of Ga2O3, In2O3 and graphite powders. Structural characterization of the NWs revealed that they have a crystalline structure close to that of In2O3 nanowires, with a small amount of Ga incorporation, which highly depends on the mass ratio between the two precursors. Dedicated gas nanosensors based on single NWs were fabricated and tested for both ethanol and nitrogen dioxide, demonstrating an improved performance compared to similar devices based on pure In2O3 or Ga2O3 NWs.

Enhanced Light-Harvesting in Single Rectangular Silicon Nanowires

Light-harvesting of single nanowires is very crucial to enhance conversion efficency of solar cells. Here, we systematically examined light-harvesting of single rectangular nanowires and found that light-harvesting of rectangular nanowires is increased contrasted with that of square nanowires, which is because decreasing the horizontal side can strengthen the leaky mode resonances and increasing the vertical side can increase the length of the light path. Numerical results showed that the photocurrent of single rectangular silicon nanowires is dramatically enhanced by 82.9% or 276.5% in comparison with that of square nanowires with the same vertical side (1000 nm) or horizontal side (100 nm), respectively. This work indicates that light-harvesting of single nanowires can be improved by decreasing the symmetry from the square to rectangular nanowires.

Improving Absorption in Single Silicon Nanowires by Symmetry-breaking Design from Square to Rectangular Cross-section

Light absorption in single nanowires (NWs) is one of the most crucial factors for photovoltaic applications. In this paper, we carried out a detailed investigation of light absorption in single rectangular NWs (RNWs). We show that the RNWs exhibit improved light absorption compared with the square NWs (SNWs), which can be attributed to the symmetry-breaking structure that can increase the light path length by increasing the vertical side and the enhanced leaky mode resonances (LMRs) by decreasing the horizontal side. We found that the light absorption in silicon RNWs can be enhanced by engineering the horizontal and vertical sides, the photocurrent is significantly increased by 276.5% or 82.9% compared with that of the SNWs with the same side length as the horizontal side of 100 nm or the vertical side of 1000 nm, respectively. This work provides an effective way for designing high-efficiency single NW photovoltaic devices based on the symmetry breaking from the SNWs to RNWs.

Light Trapping in Single Elliptical Silicon Nanowires

Light trapping in single nanowires (NWs) is of vital importance for photovoltaic applications. However, circular NWs (CNWs) can limit their light-trapping ability due to high geometrical symmetry. In this work, we present a detailed study of light trapping in single silicon NWs with an elliptical cross-section (ENWs). We demonstrate that the ENWs exhibit significantly enhanced light trapping compared with the CNWs, which can be ascribed to the symmetry-broken structure that can orthogonalize the direction of light illumination and the leaky mode resonances (LMRs). That is, the elliptical cross-section can simultaneously increase the light path length by increasing the vertical axis and reshape the LMR modes by decreasing the horizontal axis. We found that the light absorption can be engineered via tuning the horizontal and vertical axes, the photocurrent is significantly enhanced by 374.0% (150.3%, 74.1%) or 146.1% (61.0%, 35.3%) in comparison with that of the CNWs with the same diameter as the horizontal axis of 100 (200, 400) nm or the vertical axis of 1000 nm, respectively. This work advances our understanding of how to improve light trapping based on the symmetry breaking from the CNWs to ENWs and provides a rational way for designing high-efficiency single NW photovoltaic devices.

Light Trapping in Single Elliptical Silicon Nanowires

Light trapping in single nanowires (NWs) are of vital importance for photovoltaic applications. However, circular NWs (CNWs) can limit its light-trapping ability due to high geometrical symmetry. In this work, we present a detailed study of light trapping in single NWs with an elliptical cross-section (ENWs). We demonstrate that the ENWs exhibit significantly enhanced light trapping compared with the CNWs, which can be ascribed to the symmetry-broken structure that can orthogonalize the direction of light illumination and the leaky mode resonances (LMRs). That is, the elliptical cross-section can simultaneously increase the light path length by increasing the vertical axis and reshape the LMR modes by decreasing the horizontal axis. We found that the light absorption can be engineered via tuning the horizontal and vertical axes, the photocurrent is significantly enhanced by 374.0% (150.3%, 74.1%) or 146.1% (61.0%, 35.3%) in comparison with that of the CNWs with the same diameter as the horizontal axis of 100 (200, 400) nm or the vertical axis of 1000 nm, respectively. This work advances our understanding of how to improve light trapping based on the symmetry breaking from the CNWs to ENWs and provides a rational way for designing high-efficiency single or self-assembled NW photovoltaic devices.

Light Trapping in Single Elliptical Nanowires

Light trapping in single nanowires (NWs) are of vital importance for photovoltaic applications. However, circular NWs (CNWs) can limit its light-trapping ability due to high geometrical symmetry. In this work, we present a detailed study of light trapping in single NWs with an elliptical cross-section (ENWs). We demonstrate that the ENWs exhibit significantly enhanced light trapping compared with the CNWs, which can be ascribed to the symmetry-broken structure that can orthogonalize the direction of light illumination and the leaky mode resonances (LMRs). That is, the elliptical cross-section can simultaneously increase the light path length by increasing the vertical axis and reshape the LMR modes by decreasing the horizontal axis. We found that the light absorption can be engineered via tuning the horizontal and vertical axes, the photocurrent is significantly enhanced by 374.0% (150.3%, 74.1%) or 146.1% (61.0%, 35.3%) in comparison with that of the CNWs with the same diameter as the horizontal axis of 100 (200, 400) nm or the vertical axis of 1000 nm, respectively. This work advances our understanding of how to improve light trapping based on the symmetry breaking from the CNWs to ENWs and provides a rational way for designing high-efficiency single or self-assembled NW photovoltaic devices.

X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires

Core–shell nanowires (NWs) with asymmetric shells allow for strain engineering of NW properties because of the bending resulting from the lattice mismatch between core and shell material. The bending of NWs can be readily observed by electron microscopy. Using X-ray diffraction analysis with a micro- and nano-focused beam, the bending radii found by the microscopic investigations are confirmed and the strain in the NW core is analyzed. For that purpose, a kinematical diffraction theory for highly bent crystals is developed. The homogeneity of the bending and strain is studied along the growth axis of the NWs, and it is found that the lower parts, i.e. close to the substrate/wire interface, are bent less than the parts further up. Extreme bending radii down to ∼3 µm resulting in strain variation of ∼2.5% in the NW core are found.