Prospects for Bismuth Nanowires as Thermoelectrics

1998 ◽  
Vol 545 ◽  
Author(s):  
M. S. Dresselhausa ◽  
Z. Zhang ◽  
X. Sun ◽  
J. Y. Ying ◽  
J. Heremans ◽  
...  

AbstractThe small effective mass of Bi, high anisotropy of its Fermi surface, and the high aspect ratio (length/diameter) of Bi nanowires make this an excellent system for studying quantum confinement effects of a one-dimensional (ID) electron gas in relation to electrical conductivity, thermoelectric power, and thermal conductivity. A theoretical model based on the basic electronic band structure of bulk Bi is suitably modified to describe 1D bismuth nanowires and is used to predict the dependence of these transport properties on nanowire diameter, temperature and crystalline orientation of the bismuth nanowires. Experiments have been carried out on ultra-fine single crystal Bi nanowires (10–120 nm diameter) with a packing density as high as 7 × 1010 wires/cm2 to test the quantum confinement assumptions of the model and the occurrence of a quantum confinement-induced semimetal-to-semiconductor transition as the wire diameter becomes less than 100 nm. Prospects for the use of bismuth nanowires for thermoelectric applications are discussed.

1998 ◽  
Vol 545 ◽  
Author(s):  
X. Sun ◽  
Z. Zhang ◽  
G. Dresselhaus ◽  
M. S. Dresselhaus ◽  
J. Y. Ying ◽  
...  

AbstractBismuth as a semimetal is not a good thermoelectric material in bulk form because of the approximate cancellation between the electron and hole contributions. However, quantum confinement can be introduced by making Bi nanowires to move the lowest conduction subband edge up and the highest valence subband edge down to get a one-dimensional (1D) semiconductor at some critical wire diameter dc. A theoretical model based on the basic band structure of bulk Bi is developed to predict the dependence of these quantities on wire diameter and on the crystalline orientation of the bismuth nanowires. Numerical modeling is performed for trigonal, binary and bisectrix crystal orientations. By carefully tailoring the Bi wire diameter and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small nanowire diameters.


2020 ◽  
Vol 519 ◽  
pp. 146262
Author(s):  
Xudan Zhu ◽  
Dahai Li ◽  
Rongjun Zhang ◽  
Hao Zhang ◽  
Chunxiao Cong ◽  
...  

2020 ◽  
Vol 32 (29) ◽  
pp. 29LT01 ◽  
Author(s):  
Hemian Yi ◽  
Simeon J Gilbert ◽  
Alexey Lipatov ◽  
Alexander Sinitskii ◽  
Jose Avila ◽  
...  

2015 ◽  
Vol 3 (4) ◽  
pp. 879-888 ◽  
Author(s):  
Shijun Zhao ◽  
Wei Kang ◽  
Jianming Xue

Quasi-one-dimensional nanoribbons have great potential for applications in nanoelectronics and nanospintronics due to their unique quantum confinement effects.


2013 ◽  
Vol 850-851 ◽  
pp. 3-6
Author(s):  
Chao Wang ◽  
Rong Sheng Cai ◽  
Fei Yu Diao ◽  
Lu Yuan ◽  
Guang Wen Zhou ◽  
...  

One-dimensional nanostructures exhibit interesting electronic and optical properties due to their low dimensionality leading to quantum confinement effects. ZnO has received lot of attention as a nanostructured material because of unique properties rendering it suitable for various applications. In this paper, ZnO nanowires are synthesized in large quantity through thermal oxidation of brass (Cu0.7Zn0.3alloy). The epitaxial relationship between the brass substrates and ZnO layer and the epitaxial relationship between the ZnO nanowire and ZnO layer have been examined.


2008 ◽  
Vol 07 (01) ◽  
pp. 29-35 ◽  
Author(s):  
RYSZARD PYRZ

One-dimensional structures like nanotubes and nanowires are potential candidates for nanoscale sensors and actuators. Furthermore, the nanoscale cross-section of these elements introduces controllable size effects while the macroscopic length ensures good mechanical coupling to matrix materials and thus reinforcing effects in nanocomposites. Molecular dynamics simulations are employed to study the electronic and mechanical properties of smallest ZnO nanowires. It has been shown that the electronic band structure of nanowires varies with uniaxial strain and this property can be used for sensing deformation state when nanowires are embedded in a polymer matrix.


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