The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition

2012 ◽  
Vol 1426 ◽  
pp. 313-318
Author(s):  
Hyunwoong Seo ◽  
Yuting Wang ◽  
Giichiro Uchida ◽  
Kunihiro Kamataki ◽  
Naho Itagaki ◽  
...  

ABSTRACTQuantum dot-sensitized solar cells (QDSCs) based on the multiple exciton generation (MEG) of QD are attractive in the field of photochemical cells because the improvement of conventional sensitized solar cells has been stagnant recently. The distinctive characteristics of QDs are their strong photo-response in the visible region and quantum confinement effects. Its theoretical efficiency is much higher than that of solar cell based on the single exciton generation (SEG). Moreover, QDs have tunable optical properties and band-gaps depending on the particle size. But QD materials widely used for QDSC have some disadvantages of toxicity and scarcity. On the other hand, Si as one of good QD materials is abundant and not toxic. Also, Si QD has high stability against light soaking and a high optical absorption coefficient due to quantum size effects. However, the research on Si QD is rare although the quantum effect of Si was already verified. It is one of reasons that the fabrication and collection of Si nano-particles are too difficult. Therefore, this work proposed multi-hollow plasma discharge chemical vapor deposition (CVD). It is possible to collect Si particles unlike conventional CVD and solve the problems of the wet process. The optical properties of Si particles were controlled by varying experimental conditions. In this work, Si particles were fabricated with various sizes and their characteristics were analyzed. Based on the results, Si QD was applied to Si QDSC.

2014 ◽  
Vol 50 (19) ◽  
pp. 2412-2415 ◽  
Author(s):  
Hyo-Jin Ahn ◽  
Ik-Hee Kim ◽  
Jong-Chul Yoon ◽  
Sun-I Kim ◽  
Ji-Hyun Jang

A chemical vapor deposition-grown p-doped three-dimensional graphene nano-network-based DSSC exhibits 6% greater photoconversion efficiency than a Pt-based DSSC.


2009 ◽  
Vol 1165 ◽  
Author(s):  
Xiaonan Li

AbstractTin oxide (SnO2) is a durable, inexpensive transparent conducting oxide (TCO) material used for thin-film photovoltaic devices. However, the optical properties of conducting SnO2:F are generally not as good as in other conducting TCO materials such as ITO and ZnO:Al. Our previous analyses indicate that for thin-film solar cells, improving the optical properties of SnO2-coated glass could enhance photon collection and gain up to 10% additional photocurrent. Previously, we showed that some commercial SnO2 samples could have much higher optical absorption than others [2]. In this work, we continue our study on causes that could contribute to the high optical absorption of SnO2 films. The SnO2:F samples are fabricated by low-pressure metal-organic chemical vapor deposition or atmospheric-pressure chemical vapor deposition with tin precursors that includes different amounts of chlorine. Optical, electrical, and compositional analyses were performed. In addition to the free-carrier-introduced optical absorption, the non-active dopant also impacts the optical absorption. Among the SnO2 films fabricated with different precursors, the optical properties show a relationship based on the level of chlorine in the precursors and films. With a low-optical-absorption SnO2 layer, the solar cell could have better photon collection and a higher short-circuit current density.


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