Valence Band Offset at Amorphous Boron Carbide / Silicon Interfaces

ABSTRACTIn order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.

Download Full-text

X-Ray Photoelectron Spectroscopy Study of Si-C Film Growth by Chemical Vapor Deposition of Ethylene on Si(100)

10.21236/ada197437 ◽

1988 ◽

Author(s):

P. A. Taylor ◽

M. Bozack ◽

W. J. Choyke ◽

J. T. Yates ◽

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Film Growth ◽

Chemical Vapor ◽

Spectroscopy Study ◽

X Ray

Download Full-text

X‐ray photoelectron spectroscopy analysis of photostimulated chemical vapor deposition hydrogenated amorphous silicon/amorphous aluminum oxide

Applied Physics Letters ◽

10.1063/1.107407 ◽

1992 ◽

Vol 60 (10) ◽

pp. 1208-1210 ◽

Cited By ~ 1

Author(s):

K. Uwasawa ◽

F. Ishihara ◽

S. Matsumoto

Keyword(s):

Chemical Vapor Deposition ◽

Aluminum Oxide ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Spectroscopy Analysis ◽

X Ray ◽

Hydrogenated Amorphous

Download Full-text

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

Applied Physics Letters ◽

10.1063/1.3072367 ◽

2009 ◽

Vol 94 (2) ◽

pp. 022108 ◽

Cited By ~ 70

Author(s):

R. Deng ◽

B. Yao ◽

Y. F. Li ◽

Y. M. Zhao ◽

B. H. Li ◽

...

Keyword(s):

Valence Band ◽

Photoelectron Spectroscopy ◽

Band Offset ◽

Valence Band Offset ◽

X Ray ◽

Spectroscopy Measurement

Download Full-text

High Quality GaAs Mis Diodes With Very Low Surface State Density

MRS Proceedings ◽

10.1557/proc-209-703 ◽

1990 ◽

Vol 209 ◽

Author(s):

Yoshihisa Fujisaki ◽

Sumiko Sakai ◽

Saburo Ataka ◽

Kenji Shibata

Keyword(s):

Chemical Vapor Deposition ◽

Density Of States ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Chemical Vapor ◽

State Density ◽

High Quality ◽

Metal Insulator ◽

X Ray ◽

Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Download Full-text

Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

Applied Physics Letters ◽

10.1063/1.2716994 ◽

2007 ◽

Vol 90 (13) ◽

pp. 132105 ◽

Cited By ~ 75

Author(s):

P. D. C. King ◽

T. D. Veal ◽

P. H. Jefferson ◽

C. F. McConville ◽

T. Wang ◽

...

Keyword(s):

Valence Band ◽

Photoelectron Spectroscopy ◽

Band Offset ◽

Valence Band Offset ◽

X Ray

Download Full-text

Small valence band offset of h-BN/Al0.7Ga0.3N heterojunction measured by X-ray photoelectron spectroscopy

Applied Physics Letters ◽

10.1063/1.5079689 ◽

2019 ◽

Vol 114 (1) ◽

pp. 011603 ◽

Cited By ~ 6

Author(s):

Guo-Dong Hao ◽

Sachiko Tsuzuki ◽

Shin-ichiro Inoue

Keyword(s):

Valence Band ◽

Photoelectron Spectroscopy ◽

Band Offset ◽

Valence Band Offset ◽

X Ray

Download Full-text

Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy

Applied Physics Letters ◽

10.1063/1.2977478 ◽

2008 ◽

Vol 93 (8) ◽

pp. 082108 ◽

Cited By ~ 54

Author(s):

S. C. Su ◽

Y. M. Lu ◽

Z. Z. Zhang ◽

C. X. Shan ◽

B. H. Li ◽

...

Keyword(s):

Valence Band ◽

Photoelectron Spectroscopy ◽

Band Offset ◽

Valence Band Offset ◽

X Ray

Download Full-text

Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

Chinese Physics Letters ◽

10.1088/0256-307x/27/6/067302 ◽

2010 ◽

Vol 27 (6) ◽

pp. 067302 ◽

Cited By ~ 8

Author(s):

Guo Yan ◽

Liu Xiang-Lin ◽

Song Hua-Ping ◽

Yang An-Li ◽

Zheng Gao-Lin ◽

...

Keyword(s):

Valence Band ◽

Photoelectron Spectroscopy ◽

Band Offset ◽

Valence Band Offset ◽

X Ray

Download Full-text

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

MRS Proceedings ◽

10.1557/proc-611-c4.5.1 ◽

2000 ◽

Vol 611 ◽

Author(s):

Akira Izumi ◽

Hidekazu Sato ◽

Hideki Matsumura

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Chemical Vapor ◽

Catalytic Decomposition ◽

Catalytic Chemical Vapor Deposition ◽

Sio2 Films ◽

X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Download Full-text